Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: The present application is directed to a smart electronic device, including a case, a display panel, a bar, a hinge and a rotating plate. The bar includes at least a proximal bar part and a distal bar part, and a bar adjusting component configured to adjust the relative positions of the proximal bar part and the distal bar part. The proximal bar part and the distal bar part slidingly connects. The proximal bar part connects to the case through the hinge. The distal bar part connects to the display panel through the rotating plate.