Abstract: A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Abstract: A porous ceramic carrier includes at least one substrate integrally formed with a functional far infrared material and having an inside formed with a plurality of through holes, and an electrothermal film layer coated on a surface of each of the through holes of the substrate. Thus, the porous ceramic carrier has a rapid heat circulation effect by provision of the electrothermal film layer, thereby enhancing the heat circulation efficiency of the porous ceramic carrier.

Abstract: A cooling/heating fan apparatus includes a protective shade, a fan motor having a propeller shaft extended into the protective shade, an impeller mounted on a distal end of the propeller shaft, at least one porous ceramic carrier mounted on the propeller shaft and located between the fan motor and the impeller, wherein the porous ceramic carrier has a plurality of through holes each having a surface provided with an electro-thermal plating film layer. Thus, the air from the ambient environment is heated by the electro-thermal plating film layer quickly, thereby enhancing the heating efficiency of the fan apparatus.

Abstract: A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Abstract: A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

Abstract: A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.