Abstract: The present invention relates generally to sensing devices. In a specific embodiment, the present invention provides a SPAD pixel device that include a p-type material that partially encloses an n-type material. The junction between the p-type material and the n-type material is three dimensional and includes both a horizontal area and lateral areas. The SPAD pixel device also includes isolation structures that separate the SPAD pixel device from others. There are other embodiments as well.

Abstract: The present invention relates generally to sensing devices. A stacked SPAD sensor device includes a sensor layer and a logic layer. The sensor layer includes a plurality of SPAD pixels and a peripheral region surrounding the SPAD pixels. An insulation region is configured between the SPAD pixels and the peripheral region to provide electrical insulation. The logic layer includes logic circuits coupled to SPAD pixels. The logic circuits are electrically insulated from the SPAD pixels by the insulation region. There are other embodiments as well.

Abstract: In an embodiment, the present disclosure provides a backside illumination (BSI) photodiode device comprising a backside with a plurality of microlenses coupled to it, including a first microlens and a second microlens. The device includes a first doped region of p-type material within a first thickness of the backside, and a first sidewall with a first deep trench isolation (DTI) region. A frontside comprises a first sub-pixel region aligned against the first microlens and a second sub-pixel region aligned against the second microlens, each containing shaped p-type and n-type layers. An interconnect layer includes electrodes coupled to the shaped layers. The device may further include an application specific integrated circuit (ASIC) coupled to the electrodes, and can function as an avalanche photodiode or single photon avalanche diode with a thickness less than 3 um between the frontside and backside. There are other embodiments as well.

Abstract: The present invention is directed to electrical circuits. In a specific embodiment, the present invention provides a Single-Photon Avalanche Detector (SPAD) circuit that includes a junction region that is characterized by a wave-shaped profile that corresponds to a plurality of filling structures. The wave-shaped profile is associated with electric field and breakdown voltage uniformity. There are other embodiments as well.

Abstract: The present invention relates generally to sensing devices. A stacked SPAD sensor device includes a sensor layer and a logic layer. The sensor layer includes a plurality of SPAD pixels and a peripheral region surrounding the SPAD pixels. An insulation region is configured between the SPAD pixels and the peripheral region to provide electrical insulation. The logic layer includes logic circuits coupled to SPAD pixels. The logic circuits are electrically insulated from the SPAD pixels by the insulation region. There are other embodiments as well.

Abstract: The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

Abstract: The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

Abstract: The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

Abstract: The present invention is directed to electrical circuits. In a specific embodiment, the present invention provides a SPAD circuit that includes a junction region that is characterized by a wave-shaped profile that corresponds to a plurality of filling structures. The wave-shaped profile is associated with electric field and breakdown voltage uniformity. There are other embodiments as well.

Abstract: The present invention relates generally to sensing devices. In an embodiment, the present invention provides a SPAD pixel that includes a first region and a second region. An absorption region is configured within the first region. A first reflector array is configured within the second region and below the absorption region. A second reflector array is configured within the second region and below the first reflector array. The SPAD pixel also includes isolation structures configured within the first region.

Abstract: The present invention relates generally to sensing devices. In a specific embodiment, the present invention provides a SPAD pixel device that include a p-type material that partially encloses an n-type material. The junction between the p-type material and the n-type material is three dimensional and includes both a horizontal area and lateral areas. The SPAD pixel device also includes isolation structures that separate the SPAD pixel device from others. There are other embodiments as well.

Abstract: The present invention relates generally to sensing devices. In an embodiment, the present invention provides a SPAD pixel that includes a first region and a second region. An absorption region is configured within the first region. A first reflector array is configured within the second region and below the absorption region. A second reflector array is configured within the second region and below the first reflector array. The SPAD pixel also includes isolation structures configured within the first region.

Abstract: The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.