Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate and forming a floating additive layer comprising a floating additive polymer. The floating additive polymer includes a pendant fluorine substituted organic group and one or more of a pendant acid generating group, a pendant base group, a pendant acid labile group, a pendant chromophore group, a pendant developer solubility promoter group, and a pendant acid diffusion control group. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed to form a pattern in the photoresist layer.

Abstract: A method of forming a photoresist pattern includes forming an upper layer including a floating additive polymer over a photoresist layer formed on a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the upper layer is removed. The floating additive polymer is a siloxane polymer.

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a patterned photoresist layer over a substrate and removing the patterned photoresist layer using a photoresist stripping composition that is free of dimethyl sulfoxide. The photoresist stripping composition includes an organic alkaline compound including at least one of a primary amine, secondary amine, a tertiary amine or a quaternary ammonium hydroxide or a salt thereof, an organic solvent selected from the group consisting of a glycol ether, a glycol acetate, a glycol, a pyrrolidone and mixtures thereof, and a polymer solubilizer.

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, portions of an adhesion layer, barrier layer and/or seed layer is protected by a layer of an organic mask material as portions of the adhesion layer, barrier layer and/or seed layer are removed. The layer of organic mask material is modified to improve its resistance to penetration by wet etchants used to remove exposed portions of the adhesion layer, barrier layer and/or seed layer. An example modification includes treating the layer of organic mask material with a surfactant that is absorbed into the layer of organic mask material.

Abstract: Method of manufacturing semiconductor device, includes forming protective layer over substrate having plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over protective layer, and resist layer is patterned.

Abstract: A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask. A target layer is patterned using the patterned mask layer as a mask.

Abstract: A lithography method includes the following steps. A target layer is formed over a substrate. A photoresist composition is applied over the target layer to form a photoresist layer, wherein the photoresist composition comprises a metal-oxide based material. The photoresist layer is exposed to form an exposed region in the photoresist layer. A mixture is applied to the photoresist layer to develop the photoresist layer, wherein the step of applying the mixture to the photoresist layer increases a crosslinking density of the photoresist layer and increases a dissolution contrast of the photoresist layer during developing the photoresist layer by increasing a hydrophilicity of the exposed region. The target layer is etched using the photoresist layer as an etch mask.

Abstract: A lithography method includes the following steps. A target layer is formed over a substrate. A photoresist composition is applied over the target layer to form a photoresist layer. The photoresist layer is exposed. A hydrophobic material is formed over the photoresist layer. A reflow process is performed to the photoresist layer and the hydrophobic material. The hydrophobic material is removed. The target layer is patterned using the photoresist layer as an etch mask.

Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Abstract: A method for forming a semiconductor device is provided. The methods includes forming a photoresist layer over a substrate. The photoresist layer includes a polymer and an photoacid generator (PAG). The polymer includes a polymer backbone, an etch resistance promoting group chemically bonded to the polymer backbone, and an acid labile group (ALG) chemically bonded to the etch resistance promoting group. The method further includes exposing a portion of the photoresist layer to a radiation to produce acid in exposed portion, baking the photoresist layer, resulting in cleavage of the ALG, and removing an portion of the photoresist layer to form a patterned photoresist layer.

Abstract: A photoresist composition comprises a solvent and a polymer. The polymer is dissolved in the solvent. The photoresist composition further comprises a first additive. The first additive is dissolved in the solvent. The first additive is made of a core structure and one or more radical-active functional groups connected to the core structure.

Abstract: A photoresist composition comprises an acid-cleavable copolymer formed from oligomers in a backbone or an arm of the copolymer. Each oligomer comprises an acid-labile group; a first comonomer having an acidic leaving substituent; and at least one of a second comonomer having a proton donating substituent or a third comonomer having a polar substituent. The copolymer may also include a RAFT (Reversible Addition Fragmentation chain Transfer) chain transfer agent. Upon exposure to radiation, acid is generated that cleaves the copolymer. This improves the line edge roughness (LER) of the photoresist layer while maintaining good coating properties.

Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. A metallic cross-linker is used with the metallic photoresist. The cross-linker comprises a metal core and a plurality of ligands. The ligands may comprise at least one vinyl group or at least one acetylene group; or comprise an acrylate; or comprise a cinnamate; or be unable to participate in a crosslinking reaction. Upon radiation exposure, the ligands separate from the metal core, and the metal core can crosslink, or the ligands may crosslink. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.