Abstract: A device includes first to third power/ground (PG) elements; a first set of at least three tracks between the first and second PG elements and a second set of at least three tracks between the second and third PG elements, the tracks being arranged in equal numbers between the first and second PG and second and third PG elements; a first row of cells overlapping the first set; and a second row of cells overlapping the second set. In the first row of cells, a first cell has a first height and a second cell has a greater height than the first height; in the second row of cells, a third cell has the first height and a fourth cell has a lesser height less than the first height; and a track configured as an in-cell PG track is aligned with a boundary of the second and fourth cells.

Abstract: A method of semiconductor fabrication includes forming a plurality of mandrel recesses in a mandrel layer over a hard mask layer, performing a first patterning process on a spacer layer that is deposited over the mandrel layer to form a first opening pattern, performing a second patterning process to etch portions of the mandrel layer to form a second opening pattern, performing a third patterning process to form a third opening pattern in the hard mask layer based on the first opening pattern and the second opening pattern, and forming, through the hard mask layer, metal lines that are in a semiconductor layer under the hard mask layer and that are arranged in a pattern which corresponds to the third opening pattern.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern disposed within a first region from a top view perspective and extending along a first direction, a first phase shift circuit disposed within the first region, a first transmission circuit disposed within a second region from the top view perspective, and a first gate conductor extending from the first region to the second region along a second direction perpendicular to the first direction. The first phase shift circuit and the first transmission circuit are electrically connected with the first conductive pattern through the first gate conductor.

Abstract: In an embodiment, a method includes: forming a first integrated circuit die, the first integrated circuit die comprising: a first active device along a first substrate; a first electrostatic discharge well along the first substrate; a first bonding pad over the first substrate and electrically connected to the first active device; and a first lightning conductor over the first substrate and electrically connected to the first electrostatic discharge well; forming a second integrated circuit die, the second integrated circuit die comprising: a second active device along a second substrate; a second electrostatic discharge well along the second substrate; a second bonding pad over the second substrate and electrically coupled to the second active device; and a second lightning conductor over the second substrate and electrically connected to the second electrostatic discharge well; and bonding the first integrated circuit die to the second integrated circuit die.

Abstract: In some embodiments, an integrated circuit device includes a substrate having a frontside and a backside; one or more active semiconductor devices formed on the frontside of the substrate; conductive paths formed on the frontside of the substrate; and conductive paths formed on the backside of the substrate. At least some of the conductive paths formed on the backside of the substrate, and as least some of the conductive paths formed on the front side of the substrate, are signal paths among the active semiconductor devices. In in some embodiments, other conductive paths formed on the backside of the substrate are power grid lines for powering at least some of the active semiconductor devices.

Abstract: A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

Abstract: A gait evaluating system including a processor is provided. The processor identifies whether a gait type of the user belongs to a normal gait, a non-neuropathic gait or a neuropathic gait based on step feature values of a user and walking limb feature values of the user. In response to that the gait type of the user belongs to the non-neuropathic gait, the processor controls the display panel to display a first auxiliary information, a second auxiliary information, and a third auxiliary information. The first auxiliary information indicates a potential sarcopenia of the user. The second auxiliary information indicates a dietary guideline for muscle building and muscle strengthening. The third auxiliary information shows a motion instruction video for regaining or maintaining muscle strength of the user.

Abstract: Semiconductor packages and methods of forming the same are disclosed. An semiconductor package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: An integrated circuit is provided which includes a first complementary field-effect transistor and a second complementary field-effect transistor. The first complementary field-effect transistor includes at least two first transistors respectively located on a first layer and a second layer. The second complementary field-effect transistor is disposed adjacent to the first complementary field-effect transistor. The second complementary field-effect transistor includes at least two second transistors respectively located on the first layer and the second layer. Type of one of the at least two first transistors located on the first layer is different from type of one of the at least two second transistors located on the first layer.

Abstract: A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.

Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.

Abstract: Semiconductor packages and methods of forming the same are disclosed. An semiconductor package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.

Abstract: A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

Abstract: A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.

Abstract: An integrated circuit includes a first inverter and a first transmission gate constructed with wide type-one transistors and wide type-two transistors. The integrated circuit also includes a first clocked inverter constructed with narrow type-one transistors and narrow type-two transistors. A latch is formed with the first inverter and the first clocked inverter. The first transmission gate is connected to between an output of the first inverter. The wide type-one transistors are formed in a wide type-one active-region structure and the narrow type-one transistors are formed in a narrow type-one active-region structure. The wide type-two transistors are formed in a wide type-two active-region structure and the narrow type-two transistors are formed in in a narrow type-two active-region structure.

Abstract: A method includes attaching a front-side of a first die to a wafer, the first bond pad being along a back-side of the first die, the wafer comprising a substrate and a transistor along the substrate, the transistor facing the wafer, the first die comprising: a first bond pad; a first back-side interconnect structure; a first front-side interconnect structure; a first semiconductor substrate interposed between the first back-side interconnect structure and the first front-side interconnect structure; and a first transistor along the first semiconductor substrate, the first transistor facing the front-side of the first die; forming a second bond pad over the first front-side interconnect structure; and attaching a second front-side of a second die to the second bond pad of the first die, the second die comprising a second semiconductor substrate and a second transistor, the second transistor facing the front-side of the second die.

Abstract: A sport assistance system and a sport assistance method are provided. The sport assistance method includes: obtaining a real-time heart rate; executing a first assistance procedure according to a target heart rate, a maximum heart rate, a resting heart rate, a first media and the real-time heart rate; and executing a second assistance procedure according to the target heart rate and the real-time heart rate. The first assistance procedure includes: playing the first media at a first tempo rate; and adjusting the first tempo rate according to the real-time heart rate until the real-time heart rate is close to the target heart rate and a first scheduled time is met. The first initial value is greater than the resting heart rate. The second assistance procedure includes: playing a second media; and adjusting a second tempo rate according to an adjustment parameter until a second scheduled time is met.

Abstract: A device includes a first transistor layer comprising a first gate electrode and a second transistor layer comprising a second gate electrode that is stacked with the first transistor layer. n intermetal structure comprising a conductive line is disposed between the first transistor layer and the second transistor layer. A first gate contact extends along a sidewall of the first gate electrode from a top surface of the first gate electrode to the conductive line 48G. A second gate contact extends along a sidewall of the second gate electrode from a top surface of the second gate electrode to the conductive line. The first gate electrode is electrically connected to the second gate electrode by the first gate contact, the second gate contact, and the conductive line.

Abstract: A method includes forming a multi-layer stack comprising dummy layers and semiconductor layers located alternatingly, and forming a plurality of dummy gate stacks on sidewalls and a top surface of the multi-layer stack. Two of the plurality of dummy gate stacks are immediately neighboring each other, and have a space in between. A first source/drain region and a second source/drain region are formed in the multi-layer stack, with the second source/drain region overlapping the first source/drain region. The method further includes replacing the plurality of dummy gate stacks with a plurality of replacement gate stacks, replacing a first one of the plurality of replacement gate stacks with a first dielectric isolation region, forming a deep contact plug in the space, forming a front-side via over the deep contact plug, and forming a back-side via under the deep contact plug, wherein the front-side via is electrically connected to the back-side via through the deep contact plug.