Patents by Inventor Ching-Yu Huang

Ching-Yu Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220186923
    Abstract: A fan assembly including a base, a fan, a light-emitting unit, and a lighting effect component is provided. The fan is rotatably disposed above the base, and includes a central part and multiple blades extending outwards from the central part, and each of the blades has a top surface away from the base. The light-emitting unit is disposed on the base and located between the base and the central part of the fan. The lighting effect component is disposed on the base and surrounds the light-emitting unit. A projection of the lighting effect component projected onto the base is greater than a projection of the fan projected onto the base. A height of the lighting effect component protruding from the base is less than a distance between the top surface of one of the blades and the base. The lighting effect component includes an inclined inner surface.
    Type: Application
    Filed: December 10, 2021
    Publication date: June 16, 2022
    Applicant: GIGA-BYTE TECHNOLOGY CO.,LTD.
    Inventors: Shun-Chih Huang, Ching-Yu Lu, Kai-Yan Huang, Liang Yu Wu, Jeffrey Lee
  • Publication number: 20220181496
    Abstract: A semiconductor device according to the present disclosure includes an anti-punch-through (APT) region over a substrate, a plurality of channel members over the APT region, a gate structure wrapping around each of the plurality of channel members, a source/drain feature adjacent to the gate structure, and a diffusion retardation layer. The source/drain feature is spaced apart from the APT region by the diffusion retardation layer. The source/drain feature is spaced apart from each of the plurality of channel members by the diffusion retardation layer. The diffusion retardation layer is a semiconductor material.
    Type: Application
    Filed: February 28, 2022
    Publication date: June 9, 2022
    Inventors: Ching-Wei Tsai, Yi-Bo Liao, Sai-Hooi Yeong, Hou-Yu Chen, Yu-Xuan Huang, Kuan-Lun Cheng
  • Patent number: 11335666
    Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: May 17, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Publication number: 20220031195
    Abstract: The invention provides a gait evaluating system and a gait evaluating method. The gait evaluation system includes a gait evaluating device configured to: obtain, from a pressure detection device, a plurality of pressure values of a user walking on the pressure detection device; obtain a plurality of step feature values of the user based on the pressure values; obtain a plurality of walking limb feature values when the user walks on the pressure detection device based on a sensing data provided by a limb sensing device; and evaluate a gait of the user based on the step feature values and the walking limb feature values.
    Type: Application
    Filed: July 29, 2021
    Publication date: February 3, 2022
    Applicant: Industrial Technology Research Institute
    Inventors: Je-Ping Hu, Keng-Hsun Lin, Shih-Fang Yang Mao, Pin-Chou Li, Jian-Hong Wu, Szu-Ju Li, Hui-Yu Cho, Yu-Chang Chen, Yen-Nien Lu, Jyun-Siang Hsu, Nien-Ya Lee, Kuan-Ting Ho, Ming-Chieh Tsai, Ching-Yu Huang
  • Publication number: 20220013494
    Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.
    Type: Application
    Filed: July 9, 2020
    Publication date: January 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Publication number: 20210351126
    Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Application
    Filed: July 22, 2021
    Publication date: November 11, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 11075159
    Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: July 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Publication number: 20210070859
    Abstract: Provided herein is a method for determining cancer treatment using an immune-modulating therapy in a subject in need thereof. The method comprises assessing whether a lymphatic system in a subject is dysregulated. When the lymphatic system is dysregulated, a treatment for the lymphatic system is determined before a therapeutic amount of an immune-modulating therapy is administered to treat cancer in the subject. Alternatively, when the lymphatic system is dysregulated, an immune-modulating therapy is selected to treat cancer in the subject. The immune-modulating therapy is independent of immune-cell priming, antigen trafficking, antigen presentation, and any combination thereof. The subject may also be treated for cancer accordingly.
    Type: Application
    Filed: November 12, 2020
    Publication date: March 11, 2021
    Inventors: Michael David KUO, Ching-Yu HUANG
  • Patent number: 10879170
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, a molding compound, a polymer layer, a conductive trace, a conductive via and an inductor. The semiconductor die is laterally surrounded by the molding compound. The polymer layer covers the semiconductor die and the molding compound. The conductive trace, the conductive via and the inductor are embedded in the polymer layer. The conductive via extends from a top surface of the conductive trace to a top surface of the polymer layer. The inductor has a body portion extending horizontally and a protruding portion protruded from the body portion. A total height of the body and protruding portions is substantially equal to a sum of a thickness of the conductive trace and a height of the conductive via. The height of the body portion is greater than the thickness of the conductive trace.
    Type: Grant
    Filed: April 21, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Ping Chiang, Chung-Shi Liu, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Chang-Wen Huang, Yu-Sheng Hsieh, Ching-Yu Huang
  • Patent number: 10870702
    Abstract: Provided herein is a method for determining cancer treatment using an immune modulating therapy in a subject in need thereof. The method comprises assessing whether a lymphatic system in a subject is dysregulated. When the lymphatic system is dysregulated, a treatment for the lymphatic system is determined before a therapeutic amount of an immune modulating therapy is administered to treat cancer in the subject. Alternatively, when the lymphatic system is dysregulated, an immune modulating therapy is selected to treat cancer in the subject, which immune modulating therapy is independent of immune-cell priming, antigen trafficking, antigen presentation, and any combination thereof. The subject may also be treated for cancer accordingly.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: December 22, 2020
    Assignee: ENSEMLBLE GROUP HOLDINGS
    Inventors: Michael David Kuo, Ching-Yu Huang
  • Patent number: 10868131
    Abstract: A method for forming a gaseous spacer in a semiconductor device and a semiconductor device including the gaseous spacer are disclosed. In an embodiment, the method may include forming a gate stack over a substrate, depositing a first gate spacer on sidewalls of the gate stack, epitaxially growing source/drain regions on opposite sides of the gate stack, and depositing a second gate spacer over the first gate spacer to form a gaseous spacer below the second gate spacer. The gaseous spacer may be disposed laterally between the source/drain regions and the gate stack.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Hao Yeh, Ching Yu Huang
  • Publication number: 20200350433
    Abstract: A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Chung-Ting Ko, Han-Chi Lin, Chunyao Wang, Ching Yu Huang, Tze-Liang Lee, Yung-Chih Wang
  • Publication number: 20200335439
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, a molding compound, a polymer layer, a conductive trace, a conductive via and an inductor. The semiconductor die is laterally surrounded by the molding compound. The polymer layer covers the semiconductor die and the molding compound. The conductive trace, the conductive via and the inductor are embedded in the polymer layer. The conductive via extends from a top surface of the conductive trace to a top surface of the polymer layer. The inductor has a body portion extending horizontally and a protruding portion protruded from the body portion. A total height of the body and protruding portions is substantially equal to a sum of a thickness of the conductive trace and a height of the conductive via. The height of the body portion is greater than the thickness of the conductive trace.
    Type: Application
    Filed: April 21, 2019
    Publication date: October 22, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Ping Chiang, Chung-Shi Liu, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Chang-Wen Huang, Yu-Sheng Hsieh, Ching-Yu Huang
  • Patent number: 10720526
    Abstract: A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Ting Ko, Han-Chi Lin, Chunyao Wang, Ching Yu Huang, Tze-Liang Lee, Yung-Chih Wang
  • Publication number: 20200044042
    Abstract: A method for forming a gaseous spacer in a semiconductor device and a semiconductor device including the gaseous spacer are disclosed. In an embodiment, the method may include forming a gate stack over a substrate, depositing a first gate spacer on sidewalls of the gate stack, epitaxially growing source/drain regions on opposite sides of the gate stack, and depositing a second gate spacer over the first gate spacer to form a gaseous spacer below the second gate spacer. The gaseous spacer may be disposed laterally between the source/drain regions and the gate stack.
    Type: Application
    Filed: October 14, 2019
    Publication date: February 6, 2020
    Inventors: Hsin-Hao Yeh, Ching Yu Huang
  • Publication number: 20200020628
    Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Application
    Filed: July 16, 2018
    Publication date: January 16, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Publication number: 20200006557
    Abstract: A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.
    Type: Application
    Filed: August 7, 2018
    Publication date: January 2, 2020
    Inventors: Chung-Ting Ko, Han-Chi Lin, Chunyao Wang, Ching Yu Huang, Tze-Liang Lee, Yung-Chih Wang
  • Publication number: 20190386111
    Abstract: A method for forming a gaseous spacer in a semiconductor device and a semiconductor device including the gaseous spacer are disclosed. In an embodiment, the method may include forming a gate stack over a substrate, depositing a first gate spacer on sidewalls of the gate stack, epitaxially growing source/drain regions on opposite sides of the gate stack, and depositing a second gate spacer over the first gate spacer to form a gaseous spacer below the second gate spacer. The gaseous spacer may be disposed laterally between the source/drain regions and the gate stack.
    Type: Application
    Filed: June 15, 2018
    Publication date: December 19, 2019
    Inventors: Hsin-Hao Yeh, Ching Yu Huang
  • Patent number: 10510861
    Abstract: A method for forming a gaseous spacer in a semiconductor device and a semiconductor device including the gaseous spacer are disclosed. In an embodiment, the method may include forming a gate stack over a substrate, depositing a first gate spacer on sidewalls of the gate stack, epitaxially growing source/drain regions on opposite sides of the gate stack, and depositing a second gate spacer over the first gate spacer to form a gaseous spacer below the second gate spacer. The gaseous spacer may be disposed laterally between the source/drain regions and the gate stack.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Hao Yeh, Ching Yu Huang
  • Publication number: 20190355570
    Abstract: A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.
    Type: Application
    Filed: May 18, 2018
    Publication date: November 21, 2019
    Inventors: Wei-Che Hsieh, Ching Yu Huang, Hsin-Hao Yeh, Chunyao Wang, Tze-Liang Lee