Patents by Inventor Ching-Yueh Hu

Ching-Yueh Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control of air gap position in a dielectric layer
    Patent number: 7087998
    Abstract: A method for controlling the position of air gaps in intermetal dielectric layers between conductive lines and a structure formed using such a method. A first dielectric layer is deposited over at least two features and a substrate and an air gap is formed between the at least two features and above the feature height. The first dielectric layer is etched between the at least two features to open the air gap. Then a second dielectric layer is deposited over the etched first dielectric layer to form an air gap between the at least two features and completely below the feature height.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: August 8, 2006
    Assignee: ProMOS Technology, Inc.
    Inventors: Tai-Peng Lee, Ching-Yueh Hu, Chuck Jang
  • Control of air gap position in a dielectric layer
    Patent number: 6881668
    Abstract: A method for controlling the position of air gaps in intermetal dielectric layers between conductive lines and a structure formed using such a method. A first dielectric layer is deposited over at least two features and a substrate and an air gap is formed between the at least two features and above the feature height. The first dielectric layer is etched between the at least two features to open the air gap. Then a second dielectric layer is deposited over the etched first dielectric layer to form an air gap between the at least two features and completely below the feature height.
    Type: Grant
    Filed: September 5, 2003
    Date of Patent: April 19, 2005
    Assignee: Mosel Vitel, Inc.
    Inventors: Tai-Peng Lee, Ching-Yueh Hu, Chuck Jang
  • CONTROL OF AIR GAP POSITION IN A DIELECTRIC LAYER
    Publication number: 20050051864
    Abstract: A method for controlling the position of air gaps in intermetal dielectric layers between conductive lines and a structure formed using such a method. A first dielectric layer is deposited over at least two features and a substrate and an air gap is formed between the at least two features and above the feature height. The first dielectric layer is etched between the at least two features to open the air gap. Then a second dielectric layer is deposited over the etched first dielectric layer to form an air gap between the at least two features and completely below the feature height.
    Type: Application
    Filed: September 5, 2003
    Publication date: March 10, 2005
    Inventors: Tai-Peng Lee, Ching-Yueh Hu, Chuck Jang
  • Control of air gap position in a dielectric layer
    Publication number: 20050051865
    Abstract: A method for controlling the position of air gaps in intermetal dielectric layers between conductive lines and a structure formed using such a method. A first dielectric layer is deposited over at least two features and a substrate and an air gap is formed between the at least two features and above the feature height. The first dielectric layer is etched between the at least two features to open the air gap. Then a second dielectric layer is deposited over the etched first dielectric layer to form an air gap between the at least two features and completely below the feature height.
    Type: Application
    Filed: August 17, 2004
    Publication date: March 10, 2005
    Inventors: Tai-Peng Lee, Ching-Yueh Hu, Chuck Jang