Abstract: A mobile terminal and related repair method is disclosed. The method includes: obtaining current storage integrity information of the mobile terminal; matching the current storage integrity information and original storage integrity information, when the matching fails, connecting to the server, obtaining original system partition document from the server, and repairing the system partition according to the original system partition document.

Abstract: A method for managing a service or application for a smart device includes: obtaining a priority corresponding to the service or application according to a priority table; adjusting or terminating the service or application according to the priority; monitoring the service or application in real-time to obtain a monitoring result; and updating the priority table according to the monitoring result.

Abstract: A mobile terminal and related repair method is disclosed. The method includes: obtaining current storage integrity information of the mobile terminal; matching the current storage integrity information and original storage integrity information, when the matching fails, connecting to the server, obtaining original system partition document from the server, and repairing the system partition according to the original system partition document.

Abstract: A detection method, used in a mobile terminal, includes at least the following steps: receiving a test instruction; obtaining current storage integrity information of the mobile terminal according to the test instruction; matching the current storage integrity information and original storage integrity information, and outputting information indicating that the current system of the mobile terminal is an incomplete system when the matching fails.

Abstract: A method for evaluating a remaining electric charge of a battery that is utilized for supplying a single chip system includes: receiving signals from the battery and outputting parameters corresponding to the received signals; temporarily storing the parameters; and calculating the remaining electric charge, and when the single chip system wakes up from a sleep mode, updating the remaining electric charge according to the temporarily stored parameters. An associated single chip system includes: a power management unit for receiving signals from a battery and outputting parameters corresponding to the received signals; a storage unit, coupled to the power management unit, for temporarily storing the parameters; and a control unit, coupled to the storage unit, for calculating a remaining electric charge, wherein when the single chip system wakes up from a sleep mode, the control unit updates the remaining electric charge according to the parameters from the storage unit.

Abstract: A method for evaluating a remaining electric charge of a battery that is utilized for supplying a single chip system includes: receiving signals from the battery and outputting parameters corresponding to the received signals; temporarily storing the parameters; and calculating the remaining electric charge, and when the single chip system wakes up from a sleep mode, updating the remaining electric charge according to the temporarily stored parameters. An associated single chip system includes: a power management unit for receiving signals from a battery and outputting parameters corresponding to the received signals; a storage unit, coupled to the power management unit, for temporarily storing the parameters; and a control unit, coupled to the storage unit, for calculating a remaining electric charge, wherein when the single chip system wakes up from a sleep mode, the control unit updates the remaining electric charge according to the parameters from the storage unit.

Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.

Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.