Abstract: Method of analysis text message syntactically and by content, which entails: step 1; Split syntaxes (made available to subscribers by the network operator) into tokens to store in a Syntax Trie; step 2. Pre-process an incoming text from a subscriber; step 3. Split the text (pre-processed in Step 2) into tokens; step 4. Look up paths that include the tokens (obtained in Step 3) in the Syntax Trie (initialized in Step 1); step 5: Return the look-up result, which is the path in the Syntax Trie that best reflects the user intent.

Abstract: A semiconductor device including four transistors. Gates of first and third transistors extend longitudinally as part of a first linear strip. Gates of second and fourth transistors extend longitudinally as part of a second linear strip parallel to and spaced apart from first linear strip. Aligned first and second gate cut isolations separate gates of first and second transistor from gates of third transistor and fourth transistor respectively. First and second CB layers connect to the gate of first transistor and second transistor respectively. CA layer extends longitudinally between first end and second end of CA layer connects to CB layers. CB layers are electrically connected to gates of first transistor adjacent first end of CA layer and second transistor adjacent second end of CA layer respectively. CA layer extends substantially parallel to first and second linear strips and is substantially perpendicular to first and second CB layers.

Abstract: A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate. The first transistor and a second transistor are formed on the semiconductor substrate. Each transistor comprises a source, a drain, and a gate. The gate of the first transistor extends longitudinally as part of a first linear strip and the gate of the second transistor extends longitudinally as part of the second linear strip parallel to and spaced apart from the first linear strip. A first CB layer forms a local interconnect layer electrically connected to the gate of the first transistor. A second CB layer forms a local interconnect layer electrically connected to the gate of the second transistor. A CA layer forms a local interconnect layer extending longitudinally between a first end and a second end of the CA layer. The CA layer is electrically connected to the first and second CB layers.

Abstract: A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate. The first transistor and a second transistor are formed on the semiconductor substrate. Each transistor comprises a source, a drain, and a gate. The gate of the first transistor extends longitudinally as part of a first linear strip and the gate of the second transistor extends longitudinally as part of the second linear strip parallel to and spaced apart from the first linear strip. A first CB layer forms a local interconnect layer electrically connected to the gate of the first transistor. A second CB layer forms a local interconnect layer electrically connected to the gate of the second transistor. A CA layer forms a local interconnect layer extending longitudinally between a first end and a second end of the CA layer. The CA layer is electrically connected to the first and second CB layers.

Abstract: The present invention related to the ocean wave energy exploiting and storing device for electricity generation. The device consists of one hollow pillar (1), the pillar has a base to install the platform (3) and a slot for the hydraulic cylinder (2). The weight-loaded type accumulator (4) is installed within the pillar; two work platform (3) and (13) installed separately which work independently on each other. The first platform (3) covers the head of the pillar above the seal level and can move up and down. The level arm (6) is equipped with the hydraulic cylinder (9 via a swivel join (10). There is a buoy (12) installed on the other end of the level arm. The second platform (13) is placed on the head of the pressing axle (5) above the first one (3).

Abstract: A semiconductor device includes a substrate with first and second transistors disposed thereon and including sources, drains, and gates, wherein the first and second gates extend longitudinally as part of linear strips that are parallel to and spaced apart. The device further includes a first CB layer forming a local interconnect electrically connected to the first gate, a second CB layer forming a local interconnect electrically connected to the second gate, and a CA layer forming a local interconnect extending longitudinally between first and second ends of the CA layer. The first and second CB layers and the CA layer are disposed between a first metal layer and the substrate. The first metal layer is disposed above each source, drain, and gate of the transistors, The CA layer extends parallel to the first and second linear strips and is substantially perpendicular to the first and second CB layers.

Abstract: A fast installing self-propelled pontoon bridge consisting of the entrance vehicle (A-1), a vehicle-float which is connected with the entrance vehicle and an exit vehicle, an exit vehicle, and an anchoring vehicle to keep the bridge in one place, being equipped with an anchor to keep the pontoon bridge to resist the water flow.

Abstract: A semiconductor device includes a substrate with first and second transistors disposed thereon and including sources, drains, and gates, wherein the first and second gates extend longitudinally as part of linear strips that are parallel to and spaced apart. The device further includes a first CB layer forming a local interconnect electrically connected to the first gate, a second CB layer forming a local interconnect electrically connected to the second gate, and a CA layer forming a local interconnect extending longitudinally between first and second ends of the CA layer. The first and second CB layers and the CA layer are disposed between a first metal layer and the substrate. The first metal layer is disposed above each source, drain, and gate of the transistors, The CA layer extends parallel to the first and second linear strips and is substantially perpendicular to the first and second CB layers.

Abstract: The invention is about fast installing self-propelled pontoon bridge. The pontoon bridge consists of the entrance vehicle (A-1), vehicle-floats (A-2) connecting the entrance vehicle and the exit vehicle of the bridge (A-3). The anchoring vehicle (A-4) is to moor the bridge to the river bed when installing/uninstalling the bridge. The bodies of the portions are main floats; the vehicles are designed in a way that they can both move on the ground and in the water. For parts associated with moving on the ground, the conventional axles are replaced by the wheels directly driven by hydraulic motors (1). The vehicles' structures are modified to fit new operation methods. The vehicles act as joints. The vehicles are designed for straight line connection; and, the “soft” connecting is carried out before entering the water. Each vehicle can cross the river by itself. Once the exit vehicle of the bridge is approaching the opposite river bank, all the vehicles are connected.

Abstract: The present invention related to the ocean wave energy exploiting and storing device for electricity generation. The device consists of one hollow pillar (1), the pillar has a base to install the platform (3) and a slot for the hydraulic cylinder (2). The weight-loaded type accumulator (4) is installed within the pillar; two work platform (3) and (13) installed separately which work independently on each other. The first platform (3) covers the head of the pillar above the sea level and can move up and down. The level arm (6) is equipped with the hydraulic cylinder (9 via a swivel joint (10). There is a buoy (12) installed on the other end of the level arm. The second platform (13) is placed on the head of the pressing axle (5) above the first one (3).

Abstract: Embodiments of the invention describe methods and apparatus for mixing chemical components in the manufacture of polyurethane foam. The chemical components include a polyol and different blowing agents. The blowing agents are injected directly into a mixing chamber (100) at different height levels according to their boiling points. The mixing chamber allows continuous discharge of the mixture into a static mixer (400) for further mixing before being stored into a storage tank (600). The blowing agents are chemical compounds selected from the group consisting of hydrocarbon-containing compounds, hydrofluorocarbon-containing compounds or hydrofluoroolefin-containing compounds.

Abstract: A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors comprises a source, a drain, and a gate. A trench silicide layer electrically connects one of the source or the drain of the first transistor to one of the source or the drain of the second transistor.

Abstract: A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors comprises a source, a drain, and a gate. A trench silicide layer electrically connects one of the source or the drain of the first transistor to one of the source or the drain of the second transistor.

Abstract: A fiber-laying device is disclosed for laying continuous fiber material which is conveyed from a fiber storage unit to a fiber-laying head which is movable in space. The fiber materials here are guided along the kinematic chain of the robot, wherein an equalization system for equalizing length variations during movement of the robot is provided in the fiber-material storage unit.

Abstract: Embodiments of the invention describe methods and apparatus for mixing chemical components in the manufacture of polyurethane foam. The chemical components include a polyol and different blowing agents. The blowing agents are injected directly into a mixing chamber (100) at different height levels according to their boiling points. The mixing chamber allows continuous discharge of the mixture into a static mixer (400) for further mixing before being stored into a storage tank (600). The blowing agents are chemical compounds selected from the group consisting of hydrocarbon-containing compounds, hydrofluorocarbon-containing compounds or hydrofluoroolefin-containing compounds.

Abstract: An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure; providing a first gate contact over the first gate structure, and a second gate contact over the second gate structure; and providing a diffusion contact structure between the first and second gate cut regions to couple the first gate contact to the second gate contact.

Abstract: An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure; providing a first gate contact over the first gate structure, and a second gate contact over the second gate structure; and providing a diffusion contact structure between the first and second gate cut regions to couple the first gate contact to the second gate contact.

Abstract: One illustrative device disclosed herein includes a continuous active region defined in a semiconducting substrate, first and second transistors formed in and above the continuous active region, each of the first and second transistors comprising a plurality of doped regions formed in the continuous active region, a conductive isolating electrode positioned above the continuous active region between the first and second transistors and a power rail conductively coupled to the conductive isolating electrode.

Abstract: One illustrative device disclosed herein includes a continuous active region defined in a semiconducting substrate, first and second transistors formed in and above the continuous active region, each of the first and second transistors comprising a plurality of doped regions formed in the continuous active region, a conductive isolating electrode positioned above the continuous active region between the first and second transistors and a power rail conductively coupled to the conductive isolating electrode.

Abstract: A semiconductor device includes a semiconductor substrate having a diffusion region. A transistor is formed within the diffusion region. A power rail is disposed outside the diffusion region. A contact layer is disposed above the substrate and below the power rail. A via is disposed between the contact layer and the power rail to electrically connect the contact layer to the power rail. The contact layer includes a first length disposed outside the diffusion region and a second length extending from the first length into the diffusion region and electrically connected to the transistor.