Abstract: A pixel sensor cell includes a substrate of a first conductivity type, and a photoconversion region. The photoconversion region includes a pinning layer of the first conductivity type for receiving incident light of multiple colors, and a diode implant layer of a second conductivity type, disposed below the pinning layer, for accumulating photo-generated charge. Also included is a deep well of the first conductivity type, disposed below the diode implant layer, for rejecting at least one color of the incident light. The deep well includes a doped region, vertically disposed at a predetermined depth below the diode implant layer. The diode implant layer is effective in accumulating photo-generated charge of a blue color, and the deep well is effective in rejecting photo-generated charges of green and red colors from the diode implant layer.