Abstract: Systems and methods are disclosed for parsing resume documents using computer vision and optical character recognition technology in combination with a user feedback interface system to facilitate user feedback to improve the overall processing quality of the resumes that are imported into computer resume processing systems. In at least one embodiment, the system and method prompt a user to upload an input resume document, which is processed with a first parsing pass to generate initial resume data by extracting a plurality of resume text blocks. Further processing identifies an initial set of bounding blocks and to visually displays the initial resume data for user review and feedback to regroup one or more of the initial set of bounding blocks into a regrouped bounding block. Additional processing consolidates into a group text block each of the resume text blocks corresponding to the regrouped one or more of the initial set of bounding blocks.

Abstract: Systems and methods are disclosed for parsing resume documents using computer vision and optical character recognition technology in combination with a user feedback interface system to facilitate user feedback to improve the overall processing quality of the resumes that are imported into computer resume processing systems. In at least one embodiment, the system and method prompt a user to upload an input resume document, which is processed with a first parsing pass to generate initial resume data by extracting a plurality of resume text blocks. Further processing identifies an initial set of bounding blocks and to visually displays the initial resume data for user review and feedback to regroup one or more of the initial set of bounding blocks into a regrouped bounding block. Additional processing consolidates into a group text block each of the resume text blocks corresponding to the regrouped one or more of the initial set of bounding blocks.

Abstract: Hybrid silicon TFT and oxide TFT structures and methods of formation are described. In an embodiment, a protection layer is formed over a semiconductor oxide channel layer of the oxide TFT to protect the semiconductor oxide channel layer during a cleaning operation of the silicon TFT.

Abstract: A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, an ion implantation of the poly-island layer is carried out to form a source/drain region in the poly-island layer outside the channel region. An oxide layer and a silicon nitride layer, together serving as an inter-layer dielectric layer, are sequentially formed over the substrate. Thickness of the oxide layer is thicker than or the same as (thickness of the nitride layer multiplied by 9000 ?)1/2 and maximum thickness of the nitride layer is smaller than 1000 ?.

Abstract: A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, an ion implantation of the poly-island layer is carried out to form a source/drain region in the poly-island layer outside the channel region. An oxide layer and a silicon nitride layer, together serving as an inter-layer dielectric layer, are sequentially formed over the substrate. Thickness of the oxide layer is thicker than or the same as (thickness of the nitride layer multiplied by 9000 ?)1/2 and maximum thickness of the nitride layer is smaller than 1000 ?.

Abstract: A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, an ion implantation of the poly-island layer is carried out to form a source/drain region in the poly-island layer outside the channel region. An oxide layer and a silicon nitride layer, together serving as an inter-layer dielectric layer, are sequentially formed over the substrate. Thickness of the oxide layer is thicker than or the same as (thickness of the nitride layer multiplied by 9000 ?)1/2 and maximum thickness of the nitride layer is smaller than 1000 ?.

Abstract: A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, an ion implantation of the poly-island layer is carried out to form a source/drain region in the poly-island layer outside the channel region. An oxide layer and a silicon nitride layer, together serving as an inter-layer dielectric layer, are sequentially formed over the substrate. Thickness of the oxide layer is thicker than or the same as (thickness of the nitride layer multiplied by 9000 Å)1/2 and maximum thickness of the nitride layer is smaller than 1000 Å.