Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation, the selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. The photoresist composition includes a polymer including monomer units with photocleaving promoters, wherein the photocleaving promoters are one or more selected from the group consisting of living free radical polymerization chain transfer agents, electron withdrawing groups, bulky two dimensional (2-D) or three dimensional (3-D) organic groups, N-(acyloxy)phthalimides, and electron stimulated radical generators.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.

Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a boundary and a first conductive trace configured to be coupled to a first conductive pad disposed within the boundary of the substrate. The first conductive trace is inclined with respect to the boundary of the substrate.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: An image sensor includes a substrate, a grid, and a color filter. The grid is over the substrate. From a cross-sectional view, the grid includes a first grid and a second grid over the first grid, the first grid has lower portion that has a first sidewall and a second sidewall opposing the first sidewall, the second grid has a third sidewall and a fourth sidewall opposing the third sidewall, and a width between the third sidewall and the fourth sidewall is less than a width between the first sidewall and the second sidewall. The color filter extends through the grid structure.

Abstract: A connector clip is disclosed. The connector clip includes a base, a cover, a hinge coupling the cover and the base, and a fastener. The base has a first base side joined to a second base side via a connecting base side. The cover has a first cover side joined to a second cover side via a connecting cover side. The fastener holds the first base side and the first cover side in a fixed position when the connector clip is in a closed configuration in which the connecting base side is parallel to the connecting cover side. An internal cable opening is formed in part by the connecting base side and the connecting cover side when the connector clip is in the closed configuration. The connector clip secures a cable passing through the internal cable opening and connected to a board in its place in the closed configuration.

Abstract: A connector clip is disclosed. The connector clip includes a base, a cover, a hinge coupling the cover and the base, and a fastener. The base has a first base side joined to a second base side via a connecting base side. The cover has a first cover side joined to a second cover side via a connecting cover side. The fastener holds the first base side and the first cover side in a fixed position when the connector clip is in a closed configuration in which the connecting base side is parallel to the connecting cover side. An internal cable opening is formed in part by the connecting base side and the connecting cover side when the connector clip is in the closed configuration. The connector clip secures a cable passing through the internal cable opening and connected to a board in its place in the closed configuration.

Abstract: A method incudes forming a plurality of photodiodes in a substrate; forming an interconnect structure on a front-side of the substrate; forming a barrier layer on a back-side of the substrate; depositing a metal layer over the barrier layer; forming an adhesion enhancement layer over the metal layer; forming an oxide layer over the adhesion enhancement layer; etching the oxide layer, the adhesion enhancement layer, the metal layer, and the barrier layer to form an oxide grid, an adhesion enhancement grid, a metal grid, and a barrier grid, respectively, wherein the barrier grid and the adhesion enhancement grid have a same chemical element.

Abstract: The present disclosure relates to an oligopeptide. The oligopeptide includes an amino acid sequence. The amino acid sequence includes a binding motif, and the binding motif has a specific amino acid sequence. The present disclosure also relates to a testing kit including the oligopeptide and a medical composition including the oligopeptide.

Abstract: An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

Abstract: An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.

Abstract: An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.