Abstract: A bumping process comprises steps of forming a metal layer with copper on a substrate, and the metal layer with copper comprises a plurality of first zones and second zones; forming a photoresist layer on the metal layer with copper; patterning the photoresist layer to form a plurality of openings; forming a plurality of copper bumps within the openings, each of the copper bumps covers the first zones and comprises a first top surface; forming a connection layer on the first top surface; removing the photoresist layer; removing the second zones and enabling each of the first zones to form an under bump metallurgy layer, wherein the under bump metallurgy layer, the copper bump, and the connection layer possess their corresponded peripheral walls, and covering sections of a first protective layer formed on the connection layer may cover those peripheral walls to prevent ionization phenomenon.

Abstract: A bumping process includes providing a silicon substrate; forming a titanium-containing metal layer on silicon substrate, the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas; forming a first photoresist layer on titanium-containing metal layer; patterning the first photoresist layer to form a plurality of first opening slots; forming a plurality of copper bumps within first opening slots, said copper bump comprises a first top surface and a first ring surface; removing the first photoresist layer; forming a second photoresist layer on titanium-containing metal layer; patterning the second photoresist layer to form a plurality of second opening slots; forming a plurality of bump isolation layers at spaces, the first top surfaces and the first ring surfaces; forming a plurality of connective layers on bump isolation layers; removing the second photoresist layer, removing the second areas to form an under bump metallurgy layer.

Abstract: A bumping process includes providing a silicon substrate, forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas, forming a photoresist layer on the titanium-containing metal layer, patterning the photoresist layer to form a plurality of opening slots, forming a plurality of bottom coverage layers at the opening slots, proceeding a heat procedure, forming a plurality of external coverage layers to make each of the external coverage layers connect with each of the bottom coverage layers, wherein said external coverage layer and said bottom coverage layer form a wrap layer and completely surround the copper bump, forming a plurality of connective layers on the external coverage layers, removing the photoresist layer, removing the second areas and enabling each of the first areas to form an under bump metallurgy layer.

Abstract: A method for fabricating a inductor carrier comprises the steps of providing a substrate with a protective layer; forming a first photoresist layer on protective layer; patterning the first photoresist layer to form a first opening and first apertures; forming a first metal layer within first opening and first apertures; removing the first photoresist layer; forming a first dielectric layer on protective layer; forming a second photoresist layer on first dielectric layer; patterning the second photoresist layer to form a second aperture and a plurality of third apertures; forming a second metal layer within second aperture and third apertures; removing the second photoresist layer; forming a second dielectric layer on first dielectric layer; forming a third photoresist layer on second dielectric layer; patterning the third photoresist layer to form a fifth aperture and sixth apertures; forming a third metal layer within fifth aperture and sixth apertures.

Abstract: A substrate structure with compliant bump comprises a substrate, a plurality of bumps, and a metallic layer, wherein the substrate comprises a surface, a trace layer, and a protective layer. The trace layer comprises a plurality of conductive pads, and each of the conductive pads comprises an upper surface. The protective layer comprises a plurality of openings. The bumps are formed on the surface, and each of the bumps comprises a top surface, an inner surface and an outer surface and defines a first body and a second body. The first body is located on the surface. The second body is located on top of the first body. The metallic layer is formed on the top surface, the inner surface, and the upper surface.

Abstract: A method for fabricating a carrier with a three-dimensional inductor comprises the steps of providing a substrate having a protective layer; forming a first photoresist layer on the protective layer; patterning the first photoresist layer to form a second opening and a plurality of disposing slots; forming a first metal layer in second opening and disposing slots; removing the first photoresist layer; forming a first dielectric layer on the protective layer; forming a second photoresist layer on the first dielectric layer; patterning the second photoresist layer to form a plurality of slots; forming a second metal layer in slots to form a plurality of inductive portions; removing the second photoresist layer; forming a second dielectric layer on the first dielectric layer; forming a third photoresist layer on the second dielectric layer; patterning the third photoresist layer to form a plurality of slots; and forming a third metal layer in slots.