Abstract: A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.

Abstract: In a thermoelectric conversion device, support substrates (13, 14), electrodes (11, 12) formed on the support substrates and thermoelectric conversion parts (7, 10) formed on the electrodes and containing semiconductor glass are disposed. The semiconductor glass is non-lead glass containing vanadium, and the electrodes contain any of Al, Ti, Ti nitride, W, W nitride, W silicide, Ta, Cr and Si. This constitution makes it possible to provide a device structure which can be produced by an inexpensive production process, uses a composite material with an excellent thermoelectric conversion characteristic and can solve the characteristic problem of the composite material. As a result, it is possible to provide a thermoelectric conversion device with excellent characteristics and high reliability at a low cost.

Abstract: A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.

Abstract: A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.

Abstract: A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.

Abstract: The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.

Abstract: A semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. A hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. A wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate is used.

Abstract: The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.

Abstract: The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.

Abstract: The technical subject of the invention is to inhibit disconnection of electrodes caused by a step and bursting caused by residual air. That is, an object of the present invention is to provide a semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. According to the invention, a hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. Accordingly, the present invention uses a novel wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate.

Abstract: The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.

Abstract: A surface acoustic wave signal processing apparatus for processing first and second high-frequency signals having frequencies f.sub.1 and f.sub.2 respectively, which comprises: first and second surface acoustic wave delay elements for receiving the first and second high-frequency signals respectively and independently of each other, the delay elements being formed as surface acoustic wave excitation and reception transducers on a piezoelectric substrate so that a phase delay .phi..sub.1 with respect to the frequency f.sub.1 is substantially equal to a phase delay .phi..sub.2 with respect to the frequency f.sub.2 (that is, .phi..sub.1 .apprxeq..phi..sub.2); and a mixer for mixing first and second high-frequency output signals of the first and second surface acoustic wave delay elements so that a signal having a frequency .vertline.f.sub.1 -f.sub.2 .vertline. which is a difference between the two frequencies f.sub.1 and f.sub.2 is taken out as an output signal of the mixer.

Abstract: Aluminum is used for the interdigital transducer mounted on a piezoelectric substrate to realize a surface acoustic wave transducer having a small capacity ratio, no spurious resonance, and a low loss. A .theta. rotated Y cut lithium niobate single crystal piezoelectric substrate is used for the piezoelectric material, a metal film of which principal ingredient is aluminum is used for the interdigital transducer, the direction of the interdigital transducer is made parallel to the X-axis of the lithium niobate single crystal, and thick h and electrode pitch P of the interdigital transducer have the following relationship:(.theta.+5).sup.2 /300+11/12.ltoreq.h/P.times.100-8.ltoreq.-0.0001.times.(.theta.+5).sup.3 +0.1625.times.(.theta.+5)+5.5and-30.ltoreq..theta..ltoreq.20.