Abstract: A copper alloy according to the present invention is a copper alloy rolled to be plate-shaped. The copper alloy contains 8.5 to 9.5 mass % of Ni, 5.5 to 6.5 mass % of Sn with a remainder being Cu and unavoidable impurities. An average diameter of crystal grains in a cross section perpendicular to a rolling direction is less than 6 ?m. A ratio x/y of an average length x of the crystal grains in a plate width direction to an average length y in a plate thickness direction satisfies 1?x/y?2.5. An X-ray diffracted intensity ratio in a plate surface parallel to the rolling direction of the copper alloy includes, when an X-ray diffracted intensity of a (220) plane is standardized as 1, an intensity ratio of a (200) plane being 0.30 or less, an intensity ratio of a (111) plane being 0.45 or less, and an intensity ratio of a (311) plane being 0.60 or less. The intensity ratio of the (111) plane is greater than the intensity ratio of the (200) plane and smaller than the intensity ratio of the (311) plane.

Abstract: A copper alloy according to the present invention is a copper alloy rolled to be plate-shaped. The copper alloy contains 8.5 to 9.5 mass % of Ni, 5.5 to 6.5 mass % of Sn with a remainder being Cu and unavoidable impurities. An average diameter of crystal grains in a cross section perpendicular to a rolling direction is less than 6 ?m. A ratio x/y of an average length x of the crystal grains in a plate width direction to an average length y in a plate thickness direction satisfies 1?x/y?2.5. An X-ray diffracted intensity ratio in a plate surface parallel to the rolling direction of the copper alloy includes, when an X-ray diffracted intensity of a (220) plane is standardized as 1, an intensity ratio of a (200) plane being 0.30 or less, an intensity ratio of a (111) plane being 0.45 or less, and an intensity ratio of a (311) plane being 0.60 or less. The intensity ratio of the (111) plane is greater than the intensity ratio of the (200) plane and smaller than the intensity ratio of the (311) plane.

Abstract: An elastic wave element including a piezoelectric member, at least one electrode which is formed on the piezoelectric member, a corrosion-resistant layer which is formed on a surface of the electrode, a hydrophilic film which is formed on the corrosion-resistant layer and a dielectric film which is formed on the hydrophilic film, in which the corrosion-resistant layer is made is made of a compound of a material of the electrode and the hydrophilic film is made of a material having higher hydrophilic nature than that of the dielectric film such that the corrosion-resistant layer, the hydrophilic film and the dielectric film prevent erosion of the electrode by atmospheric water content.

Abstract: There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.

Abstract: In an elastic wave device in which electrodes including interdigital transducers 4 and 5 made of a conductive material are formed on a piezoelectric substrate 1, a dielectric thin film 8 including silicon oxide as its main component is deposited on the interdigital transducers 4 and 5 and a reflector 9 and the thickness of this dielectric thin film 8 is appropriately set. By appropriately setting the thickness of the dielectric thin film 8, it becomes possible to obtain an elastic wave device that is not required to be hermetically sealed in a package for the sake of protecting the electrodes from minute metallic dusts and avoiding influences from the outside.

Abstract: A process for manufacturing a plurality of dielectric thin film devices by forming a lower layer on a substrate, coating a dielectric thin film on the lower layer, forming the dielectric thin film into a plurality of predetermined shapes, and, if desired, forming an upper structure on each of the plurality of dielectric thin films, wherein the dielectric thin film is divisionally formed on the lower layer by using a mask after the lower layer is formed to have a stress in a direction opposite to that of the dielectric thin film, or alternatively the dielectric thin film is divided into predetermined shapes after being formed.

Abstract: There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.

Abstract: A piezoelectric thin film device which is composed mainly of a substrate, a piezoelectric thin film formed on the substrate, and thin film electrodes formed on both the upper and lower surfaces of the thin film. The thin film is resonated by applying an AC voltage across the electrodes. A substrate removed section is formed by partially or entirely removing the substrate below the thin film and opened to both the front and rear surfaces of the substrate through openings so as to relieve the pressure variation in the substrate removed section below a resonant structure.

Abstract: An electrode for a dielectric thin film device includes an adhesive layer adhering to a substrate, a diffusion suppressing layer containing compounds of metal elements constituting the adhesive layer or the substrate, and a main conduction layer. The crystallinity is enhanced by preventing diffusion of unnecessary elements into the dielectric thin film.

Abstract: Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.