Abstract: An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.

Abstract: An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.

Abstract: Exhaust of gas in the processing chamber is started by a gas exhaust section, and supply of an inert gas into the processing chamber is started by a gas supply section after a predetermined time length has elapsed since the exhaust of gas is started. Alternatively, the gas in the processing chamber in which a substrate is stored is exhausted by the gas exhaust section, the inert gas is supplied into the processing chamber by the gas supply section, and the pressure in a light emitter that has a light-transmitting plate is allowed to match or be close to the pressure in the processing chamber. The substrate in the processing chamber is irradiated with vacuum ultraviolet rays by the light emitter with an oxygen concentration in the gas in the processing chamber lowered to a predetermined concentration. Thus, the substrate is exposed.

Abstract: Disclosed is a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of performing exhaust of gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, and a heat treating step of performing the heat treatment of the substrate in the heat treating space.

Abstract: Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.

Abstract: After a developing step is performed by feeding developer to the substrate, a second nozzle starts dispensation of a surfactant rinse liquid to a position away from the center of a rotating substrate. This operation is performed such that the center of the substrate does not enter into a reaching region of the substrate where the surfactant rinse liquid dispensed from the second nozzle firstly reaches. Accordingly, a point of the reaching region of the surfactant rinse liquid is dispersed, leading to suppression in locally smaller or larger line width of a resist pattern at the center and around the center of the substrate. Consequently, this achieves enhanced uniformity of the line widths of the resist pattern within a surface of the substrate during the rinse process.

Abstract: Vacuum ultraviolet rays are emitted to a surface to be processed of a substrate to be processed by a light source. During an emission period in which the vacuum ultraviolet rays are emitted from the light source to the substrate, part of the vacuum ultraviolet rays is received by an illuminometer, and illuminance of the received vacuum ultraviolet rays is measured. A light receiving surface of the illuminometer is located at a constant height that is based on the surface to be processed of the substrate during the emission period of the vacuum ultraviolet rays. An exposure amount of the substrate is calculated based on the illuminance measured by the illuminometer. Emission of the vacuum ultraviolet rays from the light source to the substrate is stopped based on the calculated exposure amount of the substrate.

Abstract: After a developing step is performed by feeding developer to the substrate, a second nozzle starts dispensation of a surfactant rinse liquid to a position away from the center of a rotating substrate. This operation is performed such that the center of the substrate does not enter into a reaching region of the substrate where the surfactant rinse liquid dispensed from the second nozzle firstly reaches. Accordingly, a point of the reaching region of the surfactant rinse liquid is dispersed, leading to suppression in locally smaller or larger line width of a resist pattern at the center and around the center of the substrate. Consequently, this achieves enhanced uniformity of the line widths of the resist pattern within a surface of the substrate during the rinse process.

Abstract: An atmosphere in a processing chamber in which a substrate is stored is discharged by a suction device. At a time point at which oxygen concentration in the processing chamber is lowered to predetermined exposure starting concentration, emission of vacuum ultraviolet rays from a light source to the substrate is started. The emission of the vacuum ultraviolet rays to the substrate is stopped at a time point at which the exposure amount of the substrate increases to a predetermined set exposure amount. The exposure starting concentration is defined in advance to be higher than 1% and lower than oxygen concentration in the air, and is defined in advance such that ozone generated from oxygen atoms by the emission of the vacuum ultraviolet rays do not damage the film on the surface to be processed of the substrate.

Abstract: Exhaust of gas in the processing chamber is started by a gas exhaust section, and supply of an inert gas into the processing chamber is started by a gas supply section after a predetermined time length has elapsed since the exhaust of gas is started. Alternatively, the gas in the processing chamber in which a substrate is stored is exhausted by the gas exhaust section, the inert gas is supplied into the processing chamber by the gas supply section, and the pressure in a light emitter that has a light-transmitting plate is allowed to match or be close to the pressure in the processing chamber. The substrate in the processing chamber is irradiated with vacuum ultraviolet rays by the light emitter with an oxygen concentration in the gas in the processing chamber lowered to a predetermined concentration. Thus, the substrate is exposed.

Abstract: Vacuum ultraviolet rays are emitted to a surface to be processed of a substrate to be processed by a light source. During an emission period in which the vacuum ultraviolet rays are emitted from the light source to the substrate, part of the vacuum ultraviolet rays is received by an illuminometer, and illuminance of the received vacuum ultraviolet rays is measured. A light receiving surface of the illuminometer is located at a constant height that is based on the surface to be processed of the substrate during the emission period of the vacuum ultraviolet rays. An exposure amount of the substrate is calculated based on the illuminance measured by the illuminometer. Emission of the vacuum ultraviolet rays from the light source to the substrate is stopped based on the calculated exposure amount of the substrate.

Abstract: An atmosphere in a processing chamber in which a substrate is stored is discharged by a suction device. At a time point at which oxygen concentration in the processing chamber is lowered to predetermined exposure starting concentration, emission of vacuum ultraviolet rays from a light source to the substrate is started. The emission of the vacuum ultraviolet rays to the substrate is stopped at a time point at which the exposure amount of the substrate increases to a predetermined set exposure amount. The exposure starting concentration is defined in advance to be higher than 1% and lower than oxygen concentration in the air, and is defined in advance such that ozone generated from oxygen atoms by the emission of the vacuum ultraviolet rays do not damage the film on the surface to be processed of the substrate.

Abstract: Disclosed is a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of performing exhaust of gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, and a heat treating step of performing the heat treatment of the substrate in the heat treating space.

Abstract: Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.