Abstract: The present invention provides a lithium titanate powder for an electrode of an energy storage device, the lithium titanate powder comprising Li4Ti5O12 as a main component, having a specific surface area of 4 m2/g or more, and containing at least one localized element selected from the group consisting of boron (B), Ln (where Ln is at least one metal element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Hb, Er, Tm, Yb, Lu, Y, and Sc), and M1 (where M1 is at least one metal element selected from W and Mo), wherein boron (B), Ln, and M1 as the localized element are localized on or near surfaces of lithium titanate particles forming the lithium titanate powder.

Abstract: The present invention provides a lithium titanate powder for an electrode of an energy storage device, the lithium titanate powder comprising Li4Ti5O12 as a main component, having a specific surface area of 4 m2/g or more, and containing at least one localized element selected from the group consisting of boron (B), Ln (where Ln is at least one metal element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Hb, Er, Tm, Yb, Lu, Y, and Sc), and M1 (where M1 is at least one metal element selected from W and Mo), wherein boron (B), Ln, and M1 as the localized element are localized on or near surfaces of lithium titanate particles forming the lithium titanate powder.

Abstract: An object of the present invention is to provide a lithium titanate powder and an active material which, in the case of being applied as an electrode material of an energy storage device, can suppress the gas generation at high temperatures and the capacity reduction in high-temperature charge and discharge cycles and besides can also suppress the resistance rise in the high-temperature charge and discharge cycles, an electrode sheet, of an energy storage device, containing these, and an energy storage device using the electrode sheet. The lithium titanate powder contains Li4Ti5O12 as a main component, wherein the powder contains secondary particles being aggregates of primary particles composed of lithium titanate, and has a DBET of 0.03 ?m or more and 0.

Abstract: The present invention provides a nonaqueous electrolytic solution in which an electrolyte salt is dissolved in a nonaqueous solvent, containing 0.01% to 30% by weight of a 1,2-cyclohexanediol derivative having a specific structure; and a lithium secondary battery using the nonaqueous electrolytic solution. The lithium secondary battery exhibits excellent battery characteristics such as electrical capacity, cycle property, and storage property and can maintain excellent long-term battery performance.

Abstract: The present invention includes (1) an ester compound having a specific structure, (2) a nonaqueous electrolytic solution for lithium secondary battery comprising an electrolyte dissolved in a nonaqueous solvent and containing an ester compound having a specific structure in an amount of from 0.01 to 10% by weight of the nonaqueous electrolytic solution, which is excellent in initial battery capacity and cycle property, and (3) a lithium secondary battery comprising a positive electrode, a negative electrode and a nonaqueous electrolytic solution of an electrolyte salt dissolved in a nonaqueous solvent, wherein the nonaqueous electrolytic solution contains an ester compound having a specific structure in an amount of from 0.01 to 10% by weight of the nonaqueous electrolytic solution.

Abstract: The present invention includes (1) an ester compound having a specific structure, (2) a nonaqueous electrolytic solution for lithium secondary battery comprising an electrolyte dissolved in a nonaqueous solvent and containing an ester compound having a specific structure in an amount of from 0.01 to 10% by weight of the nonaqueous electrolytic solution, which is excellent in initial battery capacity and cycle property, and (3) a lithium secondary battery comprising a positive electrode, a negative electrode and a nonaqueous electrolytic solution of an electrolyte salt dissolved in a nonaqueous solvent, wherein the nonaqueous electrolytic solution contains an ester compound having a specific structure in an amount of from 0.01 to 10% by weight of the nonaqueous electrolytic solution.

Abstract: The present invention provides a nonaqueous electrolytic solution in which an electrolyte salt is dissolved in a nonaqueous solvent, containing 0.01% to 30% by weight of a 1,2-cyclohexanediol derivative having a specific structure; and a lithium secondary battery using the nonaqueous electrolytic solution. The lithium secondary battery exhibits excellent battery characteristics such as electrical capacity, cycle property, and storage property and can maintain excellent long-term battery performance.

Abstract: A method of producing a thin film bulk acoustic resonator having a piezoelectric layer, a first electrode joined to a first surface of the piezoelectric layer, and a second electrode joined to a second surface of the piezoelectric layer, which is located at the opposite side to the first surface, including the steps of forming a pit on a surface of a substrate; filling the pit with a sacrificial layer; polishing a surface of the sacrificial layer so that the RMS variation of a height of the surface of the sacrificial layer is equal to 25 nm or less; forming the first electrode over a partial area of the surface of the sacrificial layer and a partial area of the surface of the substrate; forming the piezoelectric layer on the first electrode so that RMS variation of a height of the second surface of the piezoelectric layer is equal to 5% or less of a thickness of the piezoelectric layer; forming the second electrode on the piezoelectric layer; and removing the sacrificial layer from the inside of the pit by et

Abstract: A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal.

Abstract: A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.

Abstract: A transmission band filter (110) having a series of elements (111, 113, 115) each composed of a film bulk acoustic resonator and grounded shunt elements (112, 114) each composed of a film bulk acoustic resonator is connected between a transmission port (102) and an antenna port (106). A reception band filter (130) having a series of elements (131, 133, 135) each composed of a film bulk acoustic resonator and grounded shunt elements (132, 134, 136) each composed of a film bulk acoustic resonator is connected between a reception port (104) and the antenna port (106). A film bulk acoustic resonator (150) for adjustment is connected between the antenna port (106) and the ground. The resonance frequency of the adjusting film bulk acoustic resonator (150) lies between the upper limit frequency of the transmission frequency pass band of the transmission band filter (110) and the lower limit frequency of the reception frequency pass band of the reception band filter (130).

Abstract: A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.

Abstract: A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal.

Abstract: A transmission band filter (110) having a series of elements (111, 113, 115) each composed of a film bulk acoustic resonator and grounded shunt elements (112, 114) each composed of a film bulk acoustic resonator is connected between a transmission port (102) and an antenna port (106). A reception band filter (130) having a series of elements (131, 133, 135) each composed of a film bulk acoustic resonator and grounded shunt elements (132, 134, 136) each composed of a film bulk acoustic resonator is connected between a reception port (104) and the antenna port (106). A film bulk acoustic resonator (150) for adjustment is connected between the antenna port (106) and the ground. The resonance frequency of the adjusting film bulk acoustic resonator (150) lies between the upper limit frequency of the transmission frequency pass band of the transmission band filter (110) and the lower limit frequency of the reception frequency pass band of the reception band filter (130).

Abstract: A pit (52) is formed in a substrate comprising a silicon wafer (51) on a surface of which a silicon oxide thin layer (53) is formed. A sandwich structure (60) comprising a piezoelectric layer (62) and lower and upper electrodes (61, 63) joined to both surfaces of the piezoelectric layer is disposed so as to stride over the pit (52). The upper surface of the lower electrode (61) and the lower surface of the piezoelectric layer (62) joined to the upper surface of the lower electrode are treated so that the RMS variation of the height thereof is equal to 25 nm or less. The thickness of the lower electrode (61) is set to 150 nm or less. According to such a structure, there is provided a high-performance thin film bulk acoustic resonator which are excellent in electromechanical coupling coefficient and acoustic quality factor.