Patents by Inventor CHITONG CHEN

CHITONG CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11127583
    Abstract: A method of treating a semiconductor substrate includes converting a first main side of the semiconductor substrate having a first coefficient of static friction relative to a surface of a wafer table to a second coefficient of static friction relative to the surface of the wafer table, wherein the second coefficient of static friction is less than the first coefficient of static friction. A photoresist layer is applied over a second main side of the semiconductor substrate having the first coefficient of static friction. The second main side opposes the first main side. The semiconductor substrate is placed on the wafer table so that the first main side of the semiconductor substrate faces the wafer table.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: September 21, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Hao Chang, Chitong Chen
  • Publication number: 20200058487
    Abstract: A method of treating a semiconductor substrate includes converting a first main side of the semiconductor substrate having a first coefficient of static friction relative to a surface of a wafer table to a second coefficient of static friction relative to the surface of the wafer table, wherein the second coefficient of static friction is less than the first coefficient of static friction. A photoresist layer is applied over a second main side of the semiconductor substrate having the first coefficient of static friction. The second main side opposes the first main side. The semiconductor substrate is placed on the wafer table so that the first main side of the semiconductor substrate faces the wafer table.
    Type: Application
    Filed: August 15, 2019
    Publication date: February 20, 2020
    Inventors: Chung-Hao CHANG, Chitong CHEN
  • Patent number: 9691750
    Abstract: In some embodiments, a semiconductor device comprises a first active region, a second active region, and a conductive metal structure. The second active region is separate from the first active region. The conductive metal structure is arranged to connect the first active region and the second active region. The conductive metal structure includes a first leg, a second leg and a body. The second leg is separate from the first leg and a body extending between and connecting the first leg and the second leg.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: June 27, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ting-Wei Chou, Wen-Lang Wu, Chitong Chen, Shun Li Chen, Ting-Wei Chiang, Li-Chun Tien
  • Publication number: 20160225752
    Abstract: In some embodiments, a semiconductor device comprises a first active region, a second active region, and a conductive metal structure. The second active region is separate from the first active region. The conductive metal structure is arranged to connect the first active region and the second active region. The conductive metal structure includes a first leg, a second leg and a body. The second leg is separate from the first leg and a body extending between and connecting the first leg and the second leg.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 4, 2016
    Inventors: TING-WEI CHOU, WEN-LANG WU, CHITONG CHEN, SHUN LI CHEN, TING-WEI CHIANG, LI-CHUN TIEN