Patents by Inventor Chitoshi Nogami

Chitoshi Nogami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5421902
    Abstract: When removing a laminar deposit existing in a thin film forming operational system of a semiconductor manufacturing apparatus, a mixture gas prepared by mixing nitrogen trifluoride gas with a fluoric gas is introduced into the thin film forming operational system so as to be brought into contact in a non-plasma state with the laminar deposit.
    Type: Grant
    Filed: May 2, 1994
    Date of Patent: June 6, 1995
    Assignee: Iwatani Sangyo Kabushiki Kaisha (Iwatani International Corp)
    Inventors: Hideki Odajima, Chitoshi Nogami, Masanori Suzuki, Manabu Saeda
  • Patent number: 5254176
    Abstract: A method of cleaning the process tube of the CVD apparatus comprising carrying silicon wafers out of the process tube, making temperature in the process tube lower enough than the process temperature, that is, equal to or higher than room temperature, and supplying cleaning gas, in which ClF.sub.3 is contained, into the process tube to react with poly-silicon and amorphous silicon (Si) stuck to that portion of the inner wall of the process tube which is not in the uniformly-heated zone in the process tube, whereby the matters stuck can be removed from the inner wall of the process tube for a shorter time.
    Type: Grant
    Filed: February 3, 1992
    Date of Patent: October 19, 1993
    Assignees: Tokyo Electron Limited, Iwatani International Corporation
    Inventors: Shigehito Ibuka, Chitoshi Nogami