Abstract: A power diode device includes a substrate. The substrate includes a core layer of a first conductive type, a first diffusion layer of the first conductive type, a second diffusion layer of a second conductive type, and a heavily doped region of the second conductive type. The core layer is located between the first diffusion layer and the second diffusion layer. A thickness of the core layer is greater than that of the second diffusion layer. The heavily doped region is located in the second diffusion layer and extends toward the core layer to form a PN junction between the heavily doped region and the core layer. A method for manufacturing the power diode device is also provided.

Abstract: Techniques for object highlighting in an ecommerce short-form video are disclosed. The object highlighting can be associated with a product within the video, defining a highlighted product. The object highlighting can be performed automatically utilizing computer-implemented techniques. A short-form video from a library of short-form videos is accessed. A plurality of objects from a catalog of products featured in the short-form video is recognized. At least one of the plurality of objects displayed by a host is identified. A first object from the plurality of objects is selected. The first object is highlighted, which causes it to be surrounded by a boundary overlay in the short-form video. A representation of the first object is dynamically inserted into an on-screen product card. An ecommerce purchase of the first object is enabled within the short-form video.

Abstract: A bridge rectifier including a common P-type diode, a common N-type diode, two first metal layers, two pairs of second metal layers, two AC inputs and two DC outputs. The P-type diode includes a common P-type doping region, a pair of first N-type substrate regions and a pair of P-type doping regions. The N-type diode includes a common N-type doping region, a pair of second N-type substrate regions and a pair of N-type doping regions. The first metal layers connect to the common N-type doping region and the common P-type doping region. The second metal layers connect to the P-type doping region and the N-type doping region. Two AC inputs connect to one of the second metal layers of the P-type diode and one of the second metal layers of the N-type diode respectively. Two DC inputs connect to the first metal layers respectively.

Abstract: A bridge rectifier including a common P-type diode, a common N-type diode, two first metal layers, two pairs of second metal layers, two AC inputs and two DC outputs. The P-type diode includes a common P-type doping region, a pair of first N-type substrate regions and a pair of P-type doping regions. The N-type diode includes a common N-type doping region, a pair of second N-type substrate regions and a pair of N-type doping regions. The first metal layers connect to the common N-type doping region and the common P-type doping region. The second metal layers connect to the P-type doping region and the N-type doping region. Two AC inputs connect to one of the second metal layers of the P-type diode and one of the second metal layers of the N-type diode respectively. Two DC inputs connect to the first metal layers respectively.

Abstract: A solar panel heat-dissipating device for adjusting temperature of a solar panel includes a base for supporting the solar panel and a cooling plate disposed between the solar panel and the base. The cooling plate includes a cooling tube contacting a side of the solar panel so as to absorb heat generated by the solar panel. In addition, conductive fluid is accommodated inside the cooling tube for dissipating the heat of the cooling tube conducted from the solar panel.

Abstract: A solar tile structure includes a solar panel and a base. The solar panel is supported on an upper surface of the base. A protruding portion is formed on a lateral surface of a first short side of the base, a sunken portion is formed on a lateral surface of a second short side of the base, and the protruding portion of the first short side can be engaged with the sunken portion of the second short side tightly. The second short side of the base and a lateral side of the protruding portion substantially align with two lateral sides of the solar panel.

Abstract: A solar panel tile structure capable of draining water includes a solar panel and a supporting plate for supporting the solar panel. At least one draining slot is formed on the supporting plate and disposed around the solar plate for draining the water surrounding the solar panel.

Abstract: A method of fabricating semiconductor integrated circuits includes (1) providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto the wafer, and a detector fixed in a position above the wafer, wherein the wafer has a radius R; (2) spin-on coating the wafer by depositing the spin-on solution onto surface of the wafer from its center and spinning-off to leave a spin coat material layer; and (3) spinning the wafer and scanning the spin coat material layer by impinging an incident light beam emanated from the fixed detector and detecting a reflected light beam.

Abstract: A power rectifier and its manufacturing method are proposed in the present invention. A cylinder-shaped PN junction is formed during the manufacturing process of the power rectifier. Via the effect of the curved surface of the cylinder-shaped PN junction, a breakdown path under a reverse bias is provided so as to control the breakdown voltage. In this way, the defects of the power diode won't affect the forming of the depletion region and the voltage snap-down problem is eliminated.

Abstract: A method of fabricating semiconductor integrated circuits includes (1) providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto the wafer, and a detector fixed in a position above the wafer, wherein the wafer has a radius R; (2) spin-on coating the wafer by depositing the spin-on solution onto surface of the wafer from its center and spinning-off to leave a spin coat material layer; and (3) spinning the wafer and scanning the spin coat material layer by impinging an incident light beam emanated from the fixed detector and detecting a reflected light beam.

Abstract: An overvoltage protection device has a voltage-limiting region parallel to its central junction to produce a transverse junction breakdown. The spacing between the voltage-limiting region and the central junction defines the breakdown voltage. Via varying the size and location of the voltage-limiting region, the protection device can has various-breakdown voltages and lower breakover currents. Thereby, the sensitivity of the protection device can be improved.

Abstract: A method for avoiding scratching of wafer backs being held by a vacuum to a fetch arm of a stepper machine for insertion into a cassette holder includes releasing the vacuum in the suction head of the fetch are before the wafer enters the cassette holder. The release of vacuum reduces frictional force between the wafer back and the suction head when the wafer accidentally hits the side of the cassette holder. Therefore, the vacuum release method avoids scratching of wafer backs by the suction head of the fetch arm. The invention requires a separate vacuum release controller to release the vacuum in the suction head for a prescribed delaying period after the fetch arm starts moving toward the cassette holder.

Abstract: The present invention relates to an adjustment bubble bend. The structure of the adjustable bubble bend allows the user to control the volume of the bubbles produced by the device and to reduce the noise emitted from the device during operation.