Abstract: The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represents a divalent group derivated from a diamine compound; and R2 independently represent a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom. The polyimide precursor has an excellent pattern-forming ability.

Abstract: A conductive ink is provided. The conductive ink includes a precursor, a reducing agent, and a protective agent, and the precursor includes copper isostearate (Cu(C18H36O2)2), wherein based on the total weight of the conductive ink, the content of the precursor is 40 wt % to 75 wt %, the content of the reducing agent is 20 wt % to 32 wt %, and the content of the protective agent is 5 wt % to 40 wt %.

Abstract: A polyimide polymer is provided. The polyimide polymer includes a repeating unit represented by formula 1.

Abstract: A polyimide polymer is provided. The polyimide polymer includes a repeating unit represented by formula 1.

Abstract: A photosensitive composition is provided. The photosensitive composition includes a composition for forming polyimide, a photoinitiator, a photo cross-linking agent, and a thermal cross-linking agent. The composition for forming polyimide includes a diamine monomer component, an anhydride monomer component, and a polyimide modifier. The diamine monomer component includes a long-chain aliphatic diamine monomer, a carboxylic acid-containing diamine monomer, and a triazole compound. The anhydride monomer component includes a dianhydride monomer and a monoanhydride monomer. The polyimide modifier has a double bond and an epoxy group.

Abstract: A polyimide polymer represented by the following formula 1 is provided. In formula 1, Ar is Ar? is A is and 0<X<0.38.

Abstract: A polyimide is provided. The polyimide includes a repeating unit represented by formula 1: wherein Ar is a tetravalent residue obtainable from an aromatic tetracarboxylic dianhydride; and A includes wherein R17 is a single bond or a C1-C18 divalent linking group.

Abstract: A polyimide polymer represented by the following formula 1 is provided. In formula 1, Ar is Ar? is A is and 0<X<0.38.

Abstract: A polyimide polymer represented by the following formula 1 is provided. In formula 1, Ar is Ar? is A is and 0<X<0.38.

Abstract: A polyimide polymer represented by the following formula 1 is provided. In formula 1, Ar is Ar? is A is and 0<X<0.38.

Abstract: An infrared absorption film includes a polymer resin substrate, a polymer dispersant and an infrared absorption material. The infrared absorption material has a plurality of tungsten oxide and/or composite tungsten oxide nanoparticles dispersed in the polymer resin substrate by the polymer dispersant, wherein a weight ratio of the polymer dispersant to the infrared absorption material is between 0.3 and 0.6.

Abstract: An infrared absorption film includes a polymer resin substrate, a polymer dispersant and an infrared absorption material. The infrared absorption material has a plurality of tungsten oxide and/or composite tungsten oxide nanoparticles dispersed in the polymer resin substrate by the polymer dispersant, wherein a weight ratio of the polymer dispersant to the infrared absorption material is between 0.3 and 0.6.