Patents by Inventor CHIU-HSIANG CHEN
CHIU-HSIANG CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240089103Abstract: A device-verification system is configured to verify the authenticity of an electronic device using a digital signature of the electronic device verified by a certificate authority. In some examples, the electronic device includes a NFC tag storing device hardware information, device public and private keys, and a device digital signature ciphertext. A user may utilize a personal device to read the information from the NFC tag and the personal device may include a software application configured to communicate the information to a cloud-based certificate authority. The certificate authority may include a distributed system (e.g., a blockchain ledger) utilized to verify, store, and subsequently retrieve data corresponding to the electronic device. The certificate authority is configured to utilize the device digital signature to verify the authenticity of the device.Type: ApplicationFiled: September 12, 2023Publication date: March 14, 2024Inventors: Chao-Ying CHEN, Chiu-Hsiang HSU, Jian-Yin YE, Jack GUINCHARD, Lee GUINCHARD
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Patent number: 11862465Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: GrantFiled: January 31, 2022Date of Patent: January 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Chun Huang, Chiu-Hsiang Chen, Ya-Wen Yeh, Yu-Tien Shen, Po-Chin Chang, Chien-Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Li-Te Lin, Pinyen Lin, Ru-Gun Liu, Chin-Hsiang Lin
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Patent number: 11854996Abstract: A method for fabricating a semiconductor device is provided. The method includes forming an alignment mark in a material layer, wherein the alignment mark has a step sidewall in the material layer, and the step sidewall of the alignment mark has a floor surface portion; forming a feature material over the material layer; and performing a planarization process at least on the feature material, wherein the planarization process stops at a level higher than the floor surface portion of the step sidewall of the alignment mark.Type: GrantFiled: April 26, 2021Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chiu-Hsiang Chen, Shih-Chun Huang, Yung-Sung Yen, Ru-Gun Liu
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Publication number: 20230152710Abstract: A method of operating a semiconductor apparatus includes generating an air flow that flows from a covering structure; causing a photomask to move over the covering structure such that particles attached to the photomask are blown away from the photomask by the air flow; and irradiating the photomask with light through a light transmission region of the covering structure.Type: ApplicationFiled: January 12, 2023Publication date: May 18, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Ming CHANG, Chiu-Hsiang CHEN, Ru-Gun LIU
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Patent number: 11586115Abstract: A method of operating a semiconductor apparatus includes generating an electric field in peripheral areas of a first covering structure and a second covering structure; causing a photomask to move to a position between the first and second covering structures such that the photomask at least partially vertically overlaps the first and second covering structures and such that particles attached to the photomask are attracted to the first and second covering structures by the electric field; and irradiating the photomask with light through light transmission regions of the first and second covering structures.Type: GrantFiled: August 25, 2021Date of Patent: February 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Ming Chang, Chiu-Hsiang Chen, Ru-Gun Liu
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Publication number: 20220157605Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: ApplicationFiled: January 31, 2022Publication date: May 19, 2022Inventors: Shih-Chun HUANG, Chiu-Hsiang CHEN, Ya-Wen YEH, Yu-Tien SHEN, Po-Chin CHANG, Chien-Wen LAI, Wei-Liang LIN, Ya Hui CHANG, Yung-Sung YEN, Li-Te LIN, Pinyen LIN, Ru-Gun LIU, Chin-Hsiang LIN
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Patent number: 11239078Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: GrantFiled: July 6, 2020Date of Patent: February 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Chun Huang, Chiu-Hsiang Chen, Ya-Wen Yeh, Yu-Tien Shen, Po-Chin Chang, Chien Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Li-Te Lin, Pinyen Lin, Ru-Gun Liu, Chin-Hsiang Lin
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Publication number: 20210382399Abstract: A method of operating a semiconductor apparatus includes generating an electric field in peripheral areas of a first covering structure and a second covering structure; causing a photomask to move to a position between the first and second covering structures such that the photomask at least partially vertically overlaps the first and second covering structures and such that particles attached to the photomask are attracted to the first and second covering structures by the electric field; and irradiating the photomask with light through light transmission regions of the first and second covering structures.Type: ApplicationFiled: August 25, 2021Publication date: December 9, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Ming CHANG, Chiu-Hsiang CHEN, Ru-Gun LIU
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Patent number: 11175597Abstract: A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.Type: GrantFiled: November 26, 2019Date of Patent: November 16, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Ming Chang, Chiu-Hsiang Chen, Ru-Gun Liu, Minfeng Chen
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Patent number: 11106140Abstract: A method for taking heat away from the photomask includes driving a working fluid to flow between a photomask and a fluid retaining structure and through a first slit of the fluid retaining structure, such that a boundary of the working fluid is confined between the photomask and the fluid retaining structure; and generating a light to irradiate the photomask through a light transmission region of the fluid retaining structure.Type: GrantFiled: July 16, 2019Date of Patent: August 31, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Ming Chang, Chiu-Hsiang Chen, Ru-Gun Liu
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Publication number: 20210242136Abstract: A method for fabricating a semiconductor device is provided. The method includes forming an alignment mark in a material layer, wherein the alignment mark has a step sidewall in the material layer, and the step sidewall of the alignment mark has a floor surface portion; forming a feature material over the material layer; and performing a planarization process at least on the feature material, wherein the planarization process stops at a level higher than the floor surface portion of the step sidewall of the alignment mark.Type: ApplicationFiled: April 26, 2021Publication date: August 5, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chiu-Hsiang CHEN, Shih-Chun HUANG, Yung-Sung YEN, Ru-Gun LIU
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Patent number: 10991657Abstract: A method for fabricating a semiconductor device is provided. The method includes obtaining a pattern density of an integrated circuit (IC) design layout; adjusting a density of an alignment mark pattern of the IC design layout according to the pattern density; and patterning a material layer according to the IC design layout after adjusting the density of the alignment mark pattern.Type: GrantFiled: August 27, 2018Date of Patent: April 27, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chiu-Hsiang Chen, Shih-Chun Huang, Yung-Sung Yen, Ru-Gun Liu
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Publication number: 20210018849Abstract: A method for taking heat away from the photomask includes driving a working fluid to flow between a photomask and a fluid retaining structure and through a first slit of the fluid retaining structure, such that a boundary of the working fluid is confined between the photomask and the fluid retaining structure; and generating a light to irradiate the photomask through a light transmission region of the fluid retaining structure.Type: ApplicationFiled: July 16, 2019Publication date: January 21, 2021Inventors: Shih-Ming Chang, Chiu-Hsiang Chen, Ru-Gun Liu
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Publication number: 20200335340Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: ApplicationFiled: July 6, 2020Publication date: October 22, 2020Inventors: Shih-Chun HUANG, Chiu-Hsiang CHEN, Ya-Wen YEH, Yu-Tien SHEN, Po-Chin CHANG, Chien Wen LAI, Wei-Liang LIN, Ya Hui CHANG, Yung-Sung YEN, Li-Te LIN, Pinyen LIN, Ru-Gun LIU, Chin-Hsiang LIN
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Patent number: 10707081Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: GrantFiled: November 1, 2018Date of Patent: July 7, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Chun Huang, Chiu-Hsiang Chen, Ya-Wen Yeh, Yu-Tien Shen, Po-Chin Chang, Chien Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Li-Te Lin, Pinyen Lin, Ru-Gun Liu, Chin-Hsiang Lin
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Publication number: 20200174382Abstract: A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.Type: ApplicationFiled: November 26, 2019Publication date: June 4, 2020Inventors: Shih-Ming CHANG, Chiu-Hsiang CHEN, Ru-Gun LIU, Minfeng CHEN
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Publication number: 20200066648Abstract: A method for fabricating a semiconductor device is provided. The method includes obtaining a pattern density of an integrated circuit (IC) design layout; adjusting a density of an alignment mark pattern of the IC design layout according to the pattern density; and patterning a material layer according to the IC design layout after adjusting the density of the alignment mark pattern.Type: ApplicationFiled: August 27, 2018Publication date: February 27, 2020Inventors: Chiu-Hsiang CHEN, Shih-Chun HUANG, Yung-Sung YEN, Ru-Gun LIU
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Patent number: 10488766Abstract: A lithography system is provided. The lithography system includes a mask and an optical module. The optical module is configured to optically form an invisible pellicle over the mask to protect the mask from contaminant particles. As a solid pellicle used in the prior arts is omitted, the critical dimension (CD) error from the boarder effect due to reflection of some light by the solid pellicle and the exposure radiation energy consumption caused by the solid pellicle can be avoided.Type: GrantFiled: February 27, 2018Date of Patent: November 26, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chiu-Hsiang Chen, Shih-Ming Chang, Chih-Jie Lee, Han-Wei Wu, Yung-Sung Yen, Ru-Gun Liu
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Publication number: 20190148147Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: ApplicationFiled: November 1, 2018Publication date: May 16, 2019Inventors: Shih-Chun Huang, Chiu-Hsiang Chen, Ya-Wen Yeh, Yu-Tien Shen, Po-Chin Chang, Chien Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Li-Te Lin, Pinyen Lin, Ru-Gun Liu, Chin-Hsiang Lin
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Publication number: 20190146362Abstract: A lithography system is provided. The lithography system includes a mask and an optical module. The optical module is configured to optically form an invisible pellicle over the mask to protect the mask from contaminant particles.Type: ApplicationFiled: February 27, 2018Publication date: May 16, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chiu-Hsiang CHEN, Shih-Ming CHANG, Chih-Jie LEE, Han-Wei WU, Yung-Sung YEN, Ru-Gun LIU