Abstract: Disclosed is a lighting-emitting device comprising a first light-emitting chip emitting a first light; a second light-emitting chip emitting a second light having a wavelength longer than that of the first light; and a heat sink nearer the second light-emitting chip than the first light-emitting chip, wherein the light-emitting device is operated from a cold state to a hot state, and a temperature of the second light-emitting chip is lower than that of the first light-emitting chip at the hot state.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.

Abstract: Disclosed are a lighting apparatus and its driving method. A disclosed lighting apparatus comprises a blue light-emitting diode die, a red light-emitting diode die, an electrical-connection structure connecting the blue light-emitting diode die and the red light-emitting diode die and having a correlated color temperature TN. A disclosed driving method of a lighting apparatus comprising operating a blue light-emitting diode emitting a first color light with an electrical power WB consumed and operating a red light-emitting diode die emitting a second color light with an electrical power WR consumed, respectively. Then, the correlated color temperature of the lighting apparatus is about TN, and a power ratio RW, the ratio of WB over WR, is about between 7.67*ln(TN)?56.6 and 5.01*ln(TN)?37.2.

Abstract: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.

Abstract: A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.

Abstract: An embodiment of the present invention discloses a light-emitting device. The light-emitting device includes a light source configured to emit a first light at a first high temperature; and an optical element, distant from the light source, configured to generate a second light in response to an irradiation of the first light, and reach a second high temperature higher than the first high temperature under the irradiation of the first light.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a first electrode part; a second electrode part; a third electrode part, spaced apart from the first electrode part and the second electrode part; and a light-emitting unit partially covering the first electrode part and the second electrode part and fully covering the second electrode part, the light-emitting unit having a conductive structure contacting the second electrode part.

Abstract: An embodiment of the present invention discloses a light-emitting device including a first light source, a second light source, and an optical element. The first light source is configured to emit a first light at a first low temperature and a first high temperature, and has a first hot/cold factor. The second light source is configured to emit a second light at the first low temperature and the first high temperature, and has a second hot/cold factor. The optical element is configured to generate a third light by the excitation of the first light, and reach a second high temperature higher than the first high temperature under the irradiation of the first light.

Abstract: A light-emitting element includes a monolithic understructure including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on a portion of the first surface and between the plurality of light-emitting structure units, wherein a height of the portion of the first surface is greater than a height of the second surface measured from a bottom of the monolithic understructure, and the portion of the first surface is exposed by the trench.

Abstract: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.

Abstract: A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.

Abstract: The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure. The second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit.

Abstract: A light-emitting device is disclosed and comprises: a semiconductor stack; a transparent substrate comprising a first material; a bonding layer which bonds the semiconductor stack and the transparent substrate; and a medium in the transparent substrate, the medium comprising a second material different from the first material.

Abstract: Disclosed are a lighting apparatus and its driving method. A disclosed lighting apparatus comprises a blue light-emitting diode die, a red light-emitting diode die, an electrical-connection structure connecting the blue light-emitting diode die and the red light-emitting diode die and having a correlated color temperature TN. A disclosed driving method of a lighting apparatus comprising operating a blue light-emitting diode emitting a first color light with an electrical power WB consumed and operating a red light-emitting diode die emitting a second color light with an electrical power WR consumed, respectively. Then, the correlated color temperature of the lighting apparatus is about TN, and a power ratio RW, the ratio of WB over WR, is about between 7.67*ln(TN)?56.6 and 5.01*ln(TN)?37.2.

Abstract: A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.

Abstract: The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active layer with a first surface; wherein the first patterned unit, protruding in a direction from the substrate to the light-emitting stack, has side surfaces abutting with each other and substantially non-parallel to the first surface in cross-sectional view, and has a non-polygon shape in top view.