Abstract: An electronic device includes a first substrate, a second substrate, a light-impermeable layer, a light-emitting unit, and a photosensor. The second substrate is opposite to the first substrate. The light-impermeable layer is disposed between the first substrate and the second substrate and includes a first opening and a second opening. The light-emitting unit is disposed between the first substrate and the second substrate and overlapped with the first opening. The photosensor is disposed on the first substrate and overlapped with the second opening.

Abstract: An optoelectronic package is provided. The optoelectronic package includes a photonic structure, an alignment component and a light transmission element. The photonic structure includes an optical I/O. The alignment component includes a through hole extending through the alignment component and aligned with the optical I/O of the photonic structure. The light transmission element entirely fills the through hole of the alignment component.

Abstract: A package device is provided. The package device includes a first die and a first through via structure. The first die has a first optical I/O. The first through via structure is over the first die. A first region of the first through via structure is configured to dissipate heat from the first die and a second region of the first through via structure is configured to transmit an optical signal to or from the first optical I/O.

Abstract: Semiconductor packages and methods for manufacturing the semiconductor packages are provided. The semiconductor package includes a first electronic element disposed over a first substrate; a second electronic element disposed over a second substrate spaced apart from the first substrate; and a first interconnection element connected to the first electronic element and the second electronic element. The first electronic element extends beyond an edge of the first substrate. The second electronic element extends beyond an edge of the second substrate and towards the first electronic element. The first interconnection element is configured to optically transmit a signal between the first electronic element and the second electronic element.

Abstract: A package device and an electronic device are provided. The package device includes a carrier and a die. The die is disposed over the carrier and has a first surface facing the carrier and a second surface opposite to the first surface. The first surface of the die is configured to electrically connect to the carrier and the second surface of the die is configured to optically connect to the carrier.

Abstract: A package structure is provided. The package structure includes a bridge component, a photonic processing unit, and an electrical device. The photonic processing unit is disposed over the bridge component. The electrical device is disposed over the bridge component. The bridge component is configured to optically couple with the photonic processing unit and electrically connect with the electronic component.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: An optoelectronic device is provided. The optoelectronic device includes a plurality of first waveguides and a plurality of second waveguides. The plurality of first waveguides are configured to receive a first plurality of optical signals. The plurality of second waveguides are configured to transmit a second plurality of optical signals. The plurality of first waveguides extend substantially along a first direction and the plurality of second waveguides extend substantially along a second direction different from and non-parallel with the first direction.

Abstract: An electronic device is provided. The electronic device includes an inductor and a dielectric layer. The inductor includes a first magnetic layer, a conductive trace over the first magnetic layer, and a second magnetic layer over the conductive trace. The dielectric layer includes a first portion between the second magnetic layer and an inclined surface of the first magnetic layer. A substantially constant distance between the second magnetic layer and the inclined surface of the first magnetic layer is defined by the dielectric layer.

Abstract: An electronic device is provided. The electronic device includes a first dielectric layer, an electronic element, an encapsulant, and a second dielectric layer. The first dielectric layer has a first coefficient of thermal expansion (CTE). The electronic element is disposed over the first dielectric layer. The encapsulant encapsulates the electronic element and has a second CTE. The second dielectric layer is disposed over the encapsulant and having a third CTE. The second CTE ranges between the first CTE and the third CTE.

Abstract: An electronic package is provided. The electronic package includes a semiconductor substrate. The semiconductor substrate includes a first active region and a first passive region separated from the first active region. The first active region is configured to regulate a power signal. The first passive region is configured to transmit a data signal.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first die, a second die, and a thermal dissipation element. The first die has a first surface. The second die is disposed on the first surface. The thermal dissipation element is disposed on the first surface. The thermal dissipation element includes a first portion extending in a first direction substantially parallel to the first surface and partially covered by the second die and a second portion extending in a second direction substantially perpendicular to the first surface to be adjacent to an edge of the second die.

Abstract: A semiconductor device package includes a plurality of semiconductor chips and an interposer structure. The interposer structure has a plurality of tiers for accommodating the plurality of semiconductor chips. The interposer structure includes at least one conductive via connecting to a pad of the plurality of semiconductor chips.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first die, a second die, and a thermal dissipation element. The first die has a first surface. The second die is disposed on the first surface. The thermal dissipation element is disposed on the first surface. The thermal dissipation element includes a first portion extending in a first direction substantially parallel to the first surface and partially covered by the second die and a second portion extending in a second direction substantially perpendicular to the first surface to be adjacent to an edge of the second die.

Abstract: A semiconductor device includes a first circuit layer, a copper pillar disposed adjacent to the first circuit layer, a second circuit layer and a solder layer. The second circuit layer includes an electrical contact and a surface finish layer disposed on the electrical contact, wherein a material of the surface finish layer is a combination of at least two of nickel, gold, and palladium. The solder layer is disposed between the copper pillar and the surface finish layer. The solder layer includes a first intermetallic compound (IMC) and a second IMC, wherein the first IMC includes a combination of two or more of copper, nickel and tin, and the second IMC includes a combination of gold and tin, a combination of palladium and tin, or both.

Abstract: A semiconductor package structure includes a substrate, a semiconductor element, an encapsulant, an adhesion layer and a metal cap. The semiconductor element is disposed on the substrate. The encapsulant covers the semiconductor element. The adhesion layer is disposed on the encapsulant. The metal cap is attached to the encapsulant by the adhesion layer, and the metal cap is conformal with the encapsulant.

Abstract: A semiconductor package structure includes a substrate, a semiconductor element, an encapsulant, an adhesion layer and a metal cap. The semiconductor element is disposed on the substrate. The encapsulant covers the semiconductor element. The adhesion layer is disposed on the encapsulant. The metal cap is attached to the encapsulant by the adhesion layer, and the metal cap is conformal with the encapsulant.