Abstract: A method of coating a plasma channel of a plasma source, comprises providing at least one electrolyte having one or more chelating agents therein, treating at least one surface to produce a processed surface, smoothing the surface of the processed surface with at least one post processing technique to produce at least one smoothed processed surface, and cleaning the smoothed surface.

Abstract: The present application is directed to a method of measuring the concentration of radicals in a gas stream which includes the steps of flowing a radical gas stream emitted from at least one radical gas generator to at least one processing chamber, providing at least one sampling reaction module having at least one sampling tube therein, establishing a reference temperature of the sampling tube with at least one thermal control module, diverting a portion of the radical gas steam from the radical gas generator into the sampling tube, reacting at least one reagent with at least one radical gas within a defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream, the compound stream flowing within the sampling tube, measuring a change of temperature of the sampling tube due to interaction of the chemical species within the compound stream and the sampling tube with sensor module, and calculating a concentration of the chemical species within the comp

Abstract: The present application is directed to a method of measuring the concentration of radicals in a gas stream which includes the steps of flowing a radical gas stream emitted from at least one radical gas generator to at least one processing chamber, providing at least one sampling reaction module having at least one sampling tube therein, establishing a reference temperature of the sampling tube with at least one thermal control module, diverting a portion of the radical gas steam from the radical gas generator into the sampling tube, reacting at least one reagent with at least one radical gas within a defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream, the compound stream flowing within the sampling tube, measuring a change of temperature of the sampling tube due to interaction of the chemical species within the compound stream and the sampling tube with sensor module, and calculating a concentration of the chemical species within the comp

Abstract: The present application is directed to a multi-sensor gas sampling detection system and method for detecting and measuring the radicals in a radical gas stream and includes at least one radical gas generator in communication with at least one gas source. The radical gas generator may be configured to generate at least one radical gas stream which may be used within a processing chamber. As such, the processing chamber is in fluid communication with the radical gas generator. At least one analysis circuit in fluid communication with the radical gas generator may be used in the detection and measurement system. The analysis may be configured to receive a defined volume and/or flow rate of the radical gas stream. In one embodiment, the analysis circuit may be configured to react at least one reagent with radicals within the defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream.

Abstract: The present application discloses a device for radical monitoring a plasma source for a remote plasma source used in a processing system and includes at least one gas source, a plasma source body having at least one passage having at least one passage surface, a first thermal sensor receiver may be formed within the plasma source body proximate to the passage surface of the passage, a first thermal sensor positioned within the first thermal sensor receiver configured to measure a first temperature of the passage surface, a second thermal sensor receiver formed within the plasma source body proximate to the passage surface of the passage and configured to measure a second temperature of the passage surface of the passage at a second location.

Abstract: The present application discloses a device for radical monitoring a plasma source for a remote plasma source used in a processing system and includes at least one gas source, a plasma source body having at least one passage having at least one passage surface, a first thermal sensor receiver may be formed within the plasma source body proximate to the passage surface of the passage, a first thermal sensor positioned within the first thermal sensor receiver configured to measure a first temperature of the passage surface, a second thermal sensor receiver formed within the plasma source body proximate to the passage surface of the passage and configured to measure a second temperature of the passage surface of the passage at a second location.

Abstract: The present application is directed to a multi-sensor gas sampling detection system and method for detecting and measuring the radicals in a radical gas stream and includes at least one radical gas generator in communication with at least one gas source. The radical gas generator may be configured to generate at least one radical gas stream which may be used within a processing chamber. As such, the processing chamber is in fluid communication with the radical gas generator. At least one analysis circuit in fluid communication with the radical gas generator may be used in the detection and measurement system. The analysis may be configured to receive a defined volume and/or flow rate of the radical gas stream. In one embodiment, the analysis circuit may be configured to react at least one reagent with radicals within the defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream.

Abstract: A method is introduced for creating a protective oxide layer over a surface of a metallic structure for use in a semiconductor processing system. The method includes providing the metallic structure, anodizing the surface of the metallic structure to form an anodization layer on the surface, and converting, using a plasma electrolytic oxidation process, at least a portion of the anodization layer to form the protective oxide layer.

Abstract: A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.

Abstract: A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.

Abstract: A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas.

Abstract: A terbium-dysprosium-iron magnetostrictive material of the type Tb1-xDyxFe2-y wherein x is less than 0.7, and y is less than or equal to 0.1, and devices using these materials.

Abstract: Heat switch. The switch includes a magnetostrictive member and a coil arranged to apply a magnetic field to the magnetostrictive member to cause the member to change from a first state to a second state of elongation. A heat conductive flexible structure is coupled to the magnetostrictive member so as to change its lateral extent in response to a change from the first state of elongation to the second state of elongation of the magnetostrictive member. A heat conductive housing is adjacent to at least one surface of the flexible structure so that the at least one surface of the flexible structure is in contact with the housing in one state of elongation of the magnetostrictive member and out of contact with the housing in the other state of elongation of the magnetostrictive member. The switch controls the flow of heat from a relatively warmer surface to a relatively colder surface.

Abstract: Tunable RF cavity. The cavity includes a magnetostrictive material coupled to the cavity and a magnetic coil configured to impress a magnetic field on the magnetostrictive material. Control circuitry energizes the magnetic coil to control the shape of the magnetostrictive material, thereby to control the length of the cavity to tune its resonant frequency.

Abstract: A terbium-dysprosium-iron magnetostrictive material of the type Tb1-xDyxFe2-y wherein x is less than 0.7, and y is less than or equal to 0.1, and devices using these materials.

Abstract: A Terbium-Dysprosium-Iron magnetostrictive material of the type Tb1−xDyxFe2−y wherein x is less than 0.7, and y is less than or equal to 0.1, and devices using these materials.