Abstract: An anode layer ion source includes a magnetic field generating member, an upper cathode electrode, a lower cathode electrode, a case member, and an anode electrode. The magnetic field generating member generates a magnetic field. The upper cathode electrode and the lower cathode respectively have two end members and form an opening there between. The two end members are two ends of the opening and guide the magnetic field to the opening, and the magnetic field in the openings is substantially parallel to the connection of two ends of the opening. The case member, the upper cathode electrode, and the lower cathode electrode form an accommodating cavity. The anode electrode is disposed in the accommodating cavity and generates an electric field to the opening. The electric field in the opening is substantially perpendicular to the magnetic field in the opening.

Abstract: Methods to manufacture metal nanopins and metal oxide nanopins are disclosed. Metal nanopins are fabricated on a metal foil by capillaritron plasma source dry etching. The aspect ratio and the density of metal nanopins are controlled by adjusting the temperature of the metal foil during ion beam dry etching. The end radius of metal nanopins less than 10 nm and the aspect ratio of metal nanopins between 25 and 30 can be achieved. Besides, metal oxide nanopins are fabricated by ion implantation and thermal oxidation. The metal foil is implanted with ions and then thermally oxidized to form the metal oxide nanopins. It shows that the metal oxide nanopins fabricated with oxygen implantation exhibit better field emission properties.

Abstract: The present invention provides a method and an apparatus for producing a two-dimensional patterned beam, e.g. a two-dimensional patterned and focused ion beam, for fabricating a nano-structure on a substrate with the precursor gas. In comparison with the conventional focused ion beam that is applied for fabricating a dot-like nano-structure the method is more simplified and easy to be achieved.

Abstract: Methods to manufacture metal nanopins and metal oxide nanopins are disclosed. Metal nanopins are fabricated on a metal foil by capillaritron plasma source dry etching. The aspect ratio and the density of metal nanopins are controlled by adjusting the temperature of the metal foil during ion beam dry etching. The end radius of metal nanopins less than 10 nm and the aspect ratio of metal nanopins between 25 and 30 can be achieved. Besides, metal oxide nanopins are fabricated by ion implantation and thermal oxidation. The metal foil is implanted with ions and then thermally oxidized to form the metal oxide nanopins. It shows that the metal oxide nanopins fabricated with oxygen implantation exhibit better field emission properties.

Abstract: A capillaritron ion beam sputtering system and a thin film production method are disclosed. By utilizing reactive capillaritron ion beam sputtering deposition, argon and oxygen are passed through a capillaritron ion source simultaneously. Argon is being ionized and accelerated by a voltage to bombard a zinc target and create zinc atoms, while oxygen atoms are created at the same time. Zinc atom and oxygen atom are combined to form ZnO to deposit on a substrate. The stoichiometric properties, deposition rate, transmission properties, surface roughness and film density of the as-deposited film can be altered by adjusting capillaritron ion beam energy and oxygen partial pressure. Using preferred processing parameters, the root-mean-square surface roughness of the as-deposited film can be smaller than 1.5 nm, while the transmission coefficient at visible range can be greater than 80%.

Abstract: The present invention provides a method and an apparatus for producing a two-dimensional patterned beam, e.g. a two-dimensional patterned and focused ion beam, for fabricating a nano-structure on a substrate with the precursor gas. In comparison with the conventional focused ion beam that is applied for fabricating a dot-like nano-structure the method is more simplified and easy to be achieved.

Abstract: A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.

Abstract: A software implementable approach capable of creating, delivering, reassembling, rendering, and storing asynchronous and synchronous multimedia message. This approach integrates video/audio streaming with existing Internet/Intranet e-mail messaging and video/audio conferencing systems. The software provides both one-way asynchronous communication as well as bi-directional synchronous communication. Each stream represents a user access from client on one computer to server on the other computer. The method enables electronic multimedia messaging on video/audio capture-equipped mobile platform with limited pre-installed software capability or memory footprint.

Abstract: A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.

Abstract: A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.