Patents by Inventor Chiun Da Shiue

Chiun Da Shiue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250149302
    Abstract: An anti-plasma coating formed on a surface of a component in a plasma chamber includes an insulation layer on the surface and a plasma-resistant layer on the insulation layer. The plasma-resistant layer includes one or more stacks, where each stack includes a crystalline layer and an amorphous layer. The anti-plasma coating improves a lifetime of the component in the plasma chamber with high-energy plasma sources.
    Type: Application
    Filed: November 6, 2023
    Publication date: May 8, 2025
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Kai Hu, Ren-Guan Duan, Chiun-Da Shiue, Chin-Han Meng
  • Publication number: 20240384401
    Abstract: A method includes: forming a first coating comprising amorphous rare earth metal-containing oxide directly on a surface of an article using a first atomic layer deposition (ALD) process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N1 times, the first coating characterized by a first thickness; forming a second coating comprising crystalline rare earth metal oxide on the first coating using a second ALD process, the second coating characterized by a second thickness; forming a third coating comprising amorphous rare earth metal-containing oxide on the second coating using a third ALD process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N2 times, the third coating characterized by a third thickness; and forming a fourth coating comprising crystalline rare earth metal oxide on the third coating using a fourth ALD process.
    Type: Application
    Filed: July 4, 2024
    Publication date: November 21, 2024
    Inventors: Ren-Guan Duan, Chen-Hsiang Lu, Chiun-Da Shiue, Chih-Kai Hu
  • Patent number: 12049697
    Abstract: A method includes forming a first coating comprising amorphous rare earth metal-containing oxide on a surface of an article using a first atomic layer deposition (ALD) process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N1 times. The method also includes forming a second coating comprising crystalline rare earth metal oxide on the first coating using a second ALD process. The method also includes forming a third coating comprising amorphous rare earth metal-containing oxide on the second coating using a third ALD process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N2 times. The method also includes forming a fourth coating comprising crystalline rare earth metal oxide on the third coating using a fourth ALD process. In some embodiments, a ratio of N1 to N2 is between about 100 and about 150.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: July 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ren-Guan Duan, Chen-Hsiang Lu, Chiun-Da Shiue, Chih-Kai Hu
  • Publication number: 20240043992
    Abstract: A method includes forming a first coating comprising amorphous rare earth metal-containing oxide on a surface of an article using a first atomic layer deposition (ALD) process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N1 times. The method also includes forming a second coating comprising crystalline rare earth metal oxide on the first coating using a second ALD process. The method also includes forming a third coating comprising amorphous rare earth metal-containing oxide on the second coating using a third ALD process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N2 times. The method also includes forming a fourth coating comprising crystalline rare earth metal oxide on the third coating using a fourth ALD process. In some embodiments, a ratio of N1 to N2 is between about 100 and about 150.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: Ren-Guan Duan, Chen-Hsiang Lu, Chiun-Da Shiue, Chih-Kai Hu
  • Patent number: 8709570
    Abstract: A near-field optical disk having surface plasmon amplification by stimulated emission of radiation (SPASER) is provided. The near-field optical disk having SPASER includes a transparent substrate, a first transparent dielectric thin film layer formed on the transparent substrate, a SPASER thin film layer formed on the first transparent dielectric thin film layer, a second transparent dielectric thin film layer formed on the SPASER thin film layer, a recording thin film layer formed on the second transparent dielectric thin film layer, and a third transparent dielectric thin film layer formed on the recording thin film layer.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: April 29, 2014
    Assignee: National Taiwan University
    Inventors: Din-Ping Tsai, Chiun-Da Shiue, Shih-Chiang Yen
  • Publication number: 20110209165
    Abstract: A near-field optical disk having surface plasmon amplification by stimulated emission of radiation (SPASER) is provided. The near-field optical disk having SPASER includes a transparent substrate, a first transparent dielectric thin film layer formed on the transparent substrate, a SPASER thin film layer formed on the first transparent dielectric thin film layer, a second transparent dielectric thin film layer formed on the SPASER thin film layer, a recording thin film layer formed on the second transparent dielectric thin film layer, and a third transparent dielectric thin film layer formed on the recording thin film layer.
    Type: Application
    Filed: November 11, 2010
    Publication date: August 25, 2011
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Din-Ping Tsai, Chiun Da Shiue, Shih Chiang Yen