Patents by Inventor Chiun-Tong Su

Chiun-Tong Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching system
    Patent number: 8016975
    Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.
    Type: Grant
    Filed: August 19, 2010
    Date of Patent: September 13, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tu-Yen Huang, Yi-Hong Chen, Ta Chin Lee, Shang-Sheng Wu, Chiun-Tong Su
  • Etching System
    Publication number: 20100314047
    Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.
    Type: Application
    Filed: August 19, 2010
    Publication date: December 16, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tu-Yen Huang, Yi-Hong Chen, Ta Chin Lee, Shang-Sheng Wu, Chiun-Tong Su
  • Etching system
    Patent number: 7803246
    Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: September 28, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tu-Yen Huang, Yi-Hong Chen, Ta Chin Lee, Shang-Sheng Wu, Chiun-Tong Su
  • ETCHING SYSTEM
    Publication number: 20080245479
    Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.
    Type: Application
    Filed: April 3, 2007
    Publication date: October 9, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tu-Yen Huang, Yi-Hong Chen, Ta Chin Lee, Shang-Sheng Wu, Chiun-Tong Su