Abstract: Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Abstract: New high energy operating regimes for high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for power beaming and wireless power transmission are made possible by new direct thermal pathways for heat sinking, where an energy conversion device comprises a plurality of fins [1] originating from inside the energy conversion device; [2] formed from an energy conversion device component; and where those fins [3] individually support traffic in energy carriers essential to the function of the energy conversion device. This allows high energy thermal interfacing and high intensity energy conversion, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor device such as a vertical multijunction photovoltaic receiver. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission.

Abstract: Thermal, electrical and/or optical interfacing for three-dimensional optoelectronic devices, such as semiconductor device billets, allows high intensity operation, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor optoelectronic device such as a photovoltaic receiver or cell, transducer, waveguide or splitter. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission. Preferred embodiments include three-dimensional photovoltaic receiver billets capable of receiving thousands of suns intensity or high intensity laser light for power conversion, such as by using edge-illuminated vertical multijunction photovoltaic receivers. Heat sink holding structures assist in thermal and electromagnetic communication with opposing billet surfaces.

Abstract: Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Abstract: A voltage source generator includes a light-transmissive component and a plurality of vertical multi junction (VMJ) cells. The light-transmissive component includes an inner space. The VMJ cells are disposed within the inner space of the light-transmissive component to receive light and perform light-to-electricity conversion. The VMJ cells are connected in series. The voltage source generator can generate a kV-level voltage and meet small-sized and low-cost demands. A voltage source module includes at least two voltage source generators connected to at least one electrical connector.

Abstract: A solar cell includes a vertical multi-junction (VMJ) cell and a passivation layer. The VMJ cell includes a plurality of PN junction substrates spaced from each other and a plurality of electrode layers. Each of the PN junction substrates includes a P+ type end surface, a P type end surface, an N type end surface, and an N+ type end surface. Each of the electrode layers is disposed between and connected to two adjacent PN junction substrates and has an exposing surface. The passivation layer covers the P+ type end surfaces, the P type end surfaces, the N type end surfaces, the N+ type end surfaces and the exposing surfaces to reduce a carrier recombination probability induced by absorbing sunlight. A method of manufacturing the solar cell includes providing a vertical multi-junction (VMJ) cell and forming a passivation layer on the VMJ cell.

Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Abstract: A Schottky diode with a low forward voltage drop has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a first surface with a protection ring inside which is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky barrier. The height of the Schottky barrier is lower than the surface of the N? type doped drift layer, thereby reducing the thickness of the N? type doped drift layer under the Schottky barrier. This configuration reduces the forward voltage drop of the Schottky barrier.

Abstract: A Schottky diode with a lowered forward voltage drop has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring inside which is a P-type doped layer. The surface of the N? type doped drift layer is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer within the P-type doped layer forms a Schottky barrier. An upward extending N type doped layer is formed on the N+ type doped layer and under the Schottky barrier to reduce the thickness of the N? type doped drift layer under the Schottky barrier. This lowers the forward voltage drop of the Schottky diode.

Abstract: A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.

Abstract: The present invention relates to high-coercivity magnetic recording media used in a hard disk drive. The magnetic recording medium comprises a nonmagnetic substrate, a seed layer comprising NiAl alloy sputtered onto the substrate, a sublayer comprising CrV alloy sputtered onto the seed layer, a magnetic layer comprising CoCrPtTaNb alloy sputtered onto the sublayer, and a carbon overcoat sputtered onto the magnetic layer. The magnetic recording medium of such a structure has improved signal-to-noise ratio, coercivity, overwrite capability, and orientation ratio thereby greatly improving the storage density and read/write capacity of the magnetic recording medium. Furthermore, the coercivity of the magnetic layer of CoCrPtTaNb alloy according to the present invention can be as high as 4000 Oersteds even without the use of the NiAl seed layer.