Patents by Inventor Chiung-Chi Tsai
Chiung-Chi Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9318676Abstract: The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure.Type: GrantFiled: February 24, 2014Date of Patent: April 19, 2016Assignee: HUGA OPTOTECH INC.Inventors: Tzong-Liang Tsai, Yu-Chu Li, Chiung-Chi Tsai
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Patent number: 9306118Abstract: A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.Type: GrantFiled: October 29, 2007Date of Patent: April 5, 2016Assignee: HUGA OPTOTECH INC.Inventors: Chiung-Chi Tsai, Tzong-Liang Tsai
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Publication number: 20140167096Abstract: The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure.Type: ApplicationFiled: February 24, 2014Publication date: June 19, 2014Applicant: HUGA OPTOTECH INC.Inventors: Tzong-Liang TSAI, Yu-Chu LI, Chiung-Chi TSAI
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Patent number: 8659045Abstract: The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.Type: GrantFiled: August 31, 2007Date of Patent: February 25, 2014Assignee: Huga Optotech Inc.Inventors: Tzong-Liang Tsai, Yu-Chu Li, Chiung-Chi Tsai
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Patent number: 8143081Abstract: A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.Type: GrantFiled: February 13, 2007Date of Patent: March 27, 2012Assignee: HUGA Optotech Inc.Inventors: Chih-Ching Cheng, Chiung-Chi Tsai
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Patent number: 7659557Abstract: The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.Type: GrantFiled: May 17, 2007Date of Patent: February 9, 2010Assignee: Huga Optotech Inc.Inventors: Chiung-Chi Tsai, Tzong-Liang Tsai, Yu-Chu Li
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Publication number: 20090200667Abstract: The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1?x?3, 1?y?3, 1?z?3, and x and y and z are molar numbers.Type: ApplicationFiled: April 17, 2009Publication date: August 13, 2009Inventors: Chiung-Chi TSAI, Tzong-Liang Tsai, Yu-Chu Li
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Publication number: 20090029497Abstract: The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a H-V group (or II-W-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.Type: ApplicationFiled: October 6, 2008Publication date: January 29, 2009Inventors: Chiung-Chi Tsai, Tzong-Liang Tsai, Yu-Chu Li
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Publication number: 20080296588Abstract: The invention discloses a substrate and a fabricating method thereof for epitaxy of a semiconductor light-emitting device. An upper surface of the substrate according to the invention, where the epitaxy of the semiconductor light-emitting device is to be performed, has a plurality of electromagnetic-wave-scribed nicks.Type: ApplicationFiled: October 29, 2007Publication date: December 4, 2008Inventors: Chiung-Chi Tsai, Tzong-Liang Tsai
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Publication number: 20080277678Abstract: A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.Type: ApplicationFiled: May 8, 2007Publication date: November 13, 2008Applicant: Huga Optotech Inc.Inventors: Yu-Chu Li, Chiung-Chi Tsai, Tzong-Liang Tsai, Su-Hui Lin
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Publication number: 20080194080Abstract: A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.Type: ApplicationFiled: February 13, 2007Publication date: August 14, 2008Inventors: Chih-Ching Cheng, Chiung-Chi Tsai
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Publication number: 20080054289Abstract: The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.Type: ApplicationFiled: August 31, 2007Publication date: March 6, 2008Applicant: HUGA OPTOTECH INC.Inventors: Tzong-Liang Tsai, Yu-Chu Li, Chiung-Chi Tsai
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Publication number: 20080023709Abstract: The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.Type: ApplicationFiled: May 17, 2007Publication date: January 31, 2008Inventors: Chiung-Chi Tsai, Tzong-Liang Tsai, Yu-Chu Li
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Publication number: 20080023835Abstract: The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxNy, where M represents the II group chemical element, N represents the V group chemical element, 1?x?3, 1?y?3, and x and y are molar numbers.Type: ApplicationFiled: May 8, 2007Publication date: January 31, 2008Inventors: Chiung-Chi Tsai, Tzong-Liang Tsai, Yu-Chu Li