Patents by Inventor Chiung-Fu HUANG

Chiung-Fu HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistors capable of blocking reverse current
    Patent number: 11658249
    Abstract: A high-voltage semiconductor device integrates a MOS transistor with a Schottky barrier diode. The MOS transistor has a semiconductor substrate of a first conduction type, a well of a second conduction, a body of the first conduction type, and a doped source of the second type. A control gate formed above the body controls electric connection between the doped source and the well. The Schottky barrier diode has a metal, functioning to be an anode of the Schottky barrier diode and contacting the well to form a Schottky barrier junction therebetween.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: May 23, 2023
    Assignee: LEADTREND TECHNOLOGY CORPORATION
    Inventors: Tsung-Yi Huang, Chun-Ming Hsu, Chiung-Fu Huang
  • MOS TRANSISTORS CAPABLE OF BLOCKING REVERSE CURRENT
    Publication number: 20210119061
    Abstract: A high-voltage semiconductor device integrates a MOS transistor with a Schottky barrier diode. The MOS transistor has a semiconductor substrate of a first conduction type, a well of a second conduction, a body of the first conduction type, and a doped source of the second type. A control gate formed above the body controls electric connection between the doped source and the well. The Schottky barrier diode has a metal, functioning to be an anode of the Schottky barrier diode and contacting the well to form a Schottky barrier junction therebetween.
    Type: Application
    Filed: September 30, 2020
    Publication date: April 22, 2021
    Inventors: Tsung-Yi HUANG, Chun-Ming HSU, Chiung-Fu HUANG