Patents by Inventor Chiung Lo
Chiung Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10279311Abstract: A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.Type: GrantFiled: August 21, 2012Date of Patent: May 7, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-I Peng, Hsiang-Pi Chang, Cary Chia-Chiung Lo, Teng-Chun Tsai, Kuo-Yin Lin, Chih-Yuan Yang
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Patent number: 10144109Abstract: A polisher includes a wafer carrier, a polishing head, a movement mechanism, and a rotation mechanism. The wafer carrier has a supporting surface. The supporting surface is configured to carry a wafer thereon. The polishing head is present above the wafer carrier. The polishing head has a polishing surface. The polishing surface of the polishing head is smaller than the supporting surface of the wafer carrier. The movement mechanism is configured to move the polishing head relative to the wafer carrier. The rotation mechanism is configured to rotate the polishing head relative to the wafer carrier.Type: GrantFiled: December 30, 2015Date of Patent: December 4, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Teng-Chun Tsai, Shen-Nan Lee, Yung-Cheng Lu, Chia-Chiung Lo, Shwang-Ming Jeng, Yee-Chia Yeo
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Patent number: 10109467Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.Type: GrantFiled: June 1, 2016Date of Patent: October 23, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Wei Hung, Chia-Chiung Lo, Chien-Feng Lin, Tsung-Hsun Yu
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Patent number: 10103262Abstract: A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.Type: GrantFiled: January 12, 2016Date of Patent: October 16, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Wei Hung, Chien-Feng Lin, Chia-Chiung Lo
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Patent number: 10043691Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.Type: GrantFiled: December 19, 2017Date of Patent: August 7, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Wei Hung, Chia-Chiung Lo, Chien-Feng Lin
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Publication number: 20180114712Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.Type: ApplicationFiled: December 19, 2017Publication date: April 26, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Wei HUNG, Chia-Chiung LO, Chien-Feng LIN
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Patent number: 9937536Abstract: Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.Type: GrantFiled: July 12, 2012Date of Patent: April 10, 2018Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Kuo-Yin Lin, Chih-I Peng, Kun-Tai Wu, Teng-Chun Tsai, Hsiang-Pi Chang, Cary Chia-Chiung Lo
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Patent number: 9881821Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.Type: GrantFiled: December 30, 2015Date of Patent: January 30, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Wei Hung, Chia-Chiung Lo, Chien-Feng Lin
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Publication number: 20170352524Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.Type: ApplicationFiled: June 1, 2016Publication date: December 7, 2017Inventors: Shih-Wei Hung, Chia-Chiung Lo, Chien-Feng Lin, Tsung-Hsun Yu
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Patent number: 9721826Abstract: A wafer supporting structure in semiconductor manufacturing, and a device and a method for manufacturing semiconductor are provided. In accordance with some embodiments of the instant disclosure, a wafer supporting structure in semiconductor manufacturing includes a transparent ring and at least two arms. The arms are connected to the transparent ring.Type: GrantFiled: January 26, 2016Date of Patent: August 1, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Yu Ma, Yii-Chi Lin, Zheng-Yang Pan, Chia-Chiung Lo
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Publication number: 20170213759Abstract: A wafer supporting structure in semiconductor manufacturing, and a device and a method for manufacturing semiconductor are provided. In accordance with some embodiments of the instant disclosure, a wafer supporting structure in semiconductor manufacturing includes a transparent ring and at least two arms. The arms are connected to the transparent ring.Type: ApplicationFiled: January 26, 2016Publication date: July 27, 2017Inventors: Chih-Yu MA, Yii-Chi LIN, Zheng-Yang PAN, Chia-Chiung LO
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Publication number: 20170200825Abstract: A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.Type: ApplicationFiled: January 12, 2016Publication date: July 13, 2017Inventors: Shih-Wei HUNG, Chien-Feng LIN, Chia-Chiung LO
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Publication number: 20170194176Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.Type: ApplicationFiled: December 30, 2015Publication date: July 6, 2017Inventors: Shih-Wei HUNG, Chia-Chiung LO, Chien-Feng LIN
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Publication number: 20170190017Abstract: A polisher includes a wafer carrier, a polishing head, a movement mechanism, and a rotation mechanism. The wafer carrier has a supporting surface. The supporting surface is configured to carry a wafer thereon. The polishing head is present above the wafer carrier. The polishing head has a polishing surface. The polishing surface of the polishing head is smaller than the supporting surface of the wafer carrier. The movement mechanism is configured to move the polishing head relative to the wafer carrier. The rotation mechanism is configured to rotate the polishing head relative to the wafer carrier.Type: ApplicationFiled: December 30, 2015Publication date: July 6, 2017Inventors: Teng-Chun TSAI, Shen-Nan LEE, Yung-Cheng LU, Chia-Chiung LO, Shwang-Ming JENG, Yee-Chia YEO
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Patent number: 9048087Abstract: Methods for an oxide layer over an epitaxial layer. In an embodiment, a method includes forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. In another embodiment, a densification process is applied to an oxide layer including treating with thermal energy, UV energy, or both. In an embodiment for a gate-all-around device, the cleaning process is applied to an oxide layer over an epitaxial portion of a fin. Additional methods are disclosed.Type: GrantFiled: June 21, 2013Date of Patent: June 2, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Lan Wu, Chi-Yuan Chen, Ming-Chyi Liu, Cary Chia-Chiung Lo, Teng-Chun Tsai, Cheng-Tung Lin, Kuo-Yin Lin, Li-Ting Wang, Wan-Chun Pan, Ming-Liang Yen, Huicheng Chang
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Patent number: 8927362Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first region and a second region. The semiconductor device further includes a first buffer layer formed over the substrate and between first and second isolation regions in the first region and a second buffer layer formed over the substrate and between first and second isolation regions in the second region. The semiconductor device further includes a first fin structure formed over the first buffer layer and between the first and second isolation regions in the first region and a second fin structure formed over the second buffer layer and between the first and second isolation regions in the second region. The first buffer layer includes a top surface different from a top surface of the second buffer layer.Type: GrantFiled: January 31, 2014Date of Patent: January 6, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo-Cheng Ching, Shi Ning Ju, Cary Chia-Chiung Lo, Huicheng Chang, Chun Chung Su
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Publication number: 20140273412Abstract: Methods for an oxide layer over an epitaxial layer. In an embodiment, a method includes forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. In another embodiment, a densification process is applied to an oxide layer including treating with thermal energy, UV energy, or both. In an embodiment for a gate-all-around device, the cleaning process is applied to an oxide layer over an epitaxial portion of a fin. Additional methods are disclosed.Type: ApplicationFiled: June 21, 2013Publication date: September 18, 2014Inventors: Li-Lan Wu, Chi-Yuan Chen, Ming-Chyi Liu, Cary Chia-Chiung Lo, Teng-Chun Tsai, Cheng-Tung Lin, Kuo-Yin Lin, Li-Ting Wang, Wan-Chun Pan, Ming-Liang Yen, Huicheng Chang
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Publication number: 20140141582Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first region and a second region. The semiconductor device further includes a first buffer layer formed over the substrate and between first and second isolation regions in the first region and a second buffer layer formed over the substrate and between first and second isolation regions in the second region. The semiconductor device further includes a first fin structure formed over the first buffer layer and between the first and second isolation regions in the first region and a second fin structure formed over the second buffer layer and between the first and second isolation regions in the second region. The first buffer layer includes a top surface different from a top surface of the second buffer layer.Type: ApplicationFiled: January 31, 2014Publication date: May 22, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo-Cheng Ching, Shi Ning Ju, Cary Chia-Chiung Lo, Huicheng Chang, Chun Chung Su
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Patent number: 8680576Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first region and a second region. The semiconductor device further includes a first buffer layer formed over the substrate and between first and second isolation regions in the first region and a second buffer layer formed over the substrate and between first and second isolation regions in the second region. The semiconductor device further includes a first fin structure formed over the first buffer layer and between the first and second isolation regions in the first region and a second fin structure formed over the second buffer layer and between the first and second isolation regions in the second region. The first buffer layer includes a top surface different from a top surface of the second buffer layer.Type: GrantFiled: May 16, 2012Date of Patent: March 25, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo-Cheng Ching, Shi Ning Ju, Cary Chia-Chiung Lo, Huicheng Chang, Chun Chung Su
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Publication number: 20140053980Abstract: A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.Type: ApplicationFiled: August 21, 2012Publication date: February 27, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-I Peng, Hsiang-Pi Chang, Cary Chia-Chiung Lo, Teng-Chun Tsai, Kuo-Yin Lin, Chih-Yuan Yang