Abstract: A piezoelectronic device and a method of fabricating the same are provided. The piezoelectronic device has a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape.

Abstract: This disclosure provides systems, methods and apparatuses for providing a boron nitride layer in a cavity of an optical electromechanical systems (EMS) device. The boron nitride layer can be deposited, for example using ALD, after removal of the sacrificial layer to define an EMS cavity. The boron nitride layer may reduce stiction between a first and second electrode structure of the EMS device.

Abstract: A method of fabricating visible light absorbed TiO2/CNT photocatalysts and photocatalytic filters is disclosed, in which the method of fabricating the photocatalysts comprises steps: (a) providing a substrate; (b) forming a plurality of carbon nanotubes on the substrate; (c) providing a titanium source and an oxygen source; and (d) forming at least one titanium dioxide layer on the carbon nanotubes. The filter of the present invention comprises: a substrate, a plurality of carbon nanotubes, and a titanium dioxide layer. The plurality of carbon nanotubes form on the surface of the substrate, one end of each carbon nanotube connects to the substrate, and the titanium dioxide layer covers the surface of the carbon nanotubes. The filter of the present invention is a visible light absorbed filtering net, the titanium dioxide layer formed on the CNTs has high uniformity and therefore the photodegradation efficiency of the filter is an improvement.

Abstract: A method of surface treatment and surface treated article provided by the same are disclosed. The method of surface treatment of the present invention comprises: providing a substrate; and forming a ceramic layer on a surface of the substrate by atomic layer deposition (ALD), wherein the ceramic layer has a thickness of 1 nm to 1000 nm. The method of surface treatment of the present invention utilizes an atomic layer deposition (ALD) method to form a ceramic layer on a surface of the substrate, in which the formed ceramic layer has excellent uniformity and is randomly and entirely coated on the surface of the substrate. Therefore, the substrate surface treated by the method of the present invention is able to have a color the same as or different to that of the surface of the substrate and simultaneously prevent oxidation/tarnish occurring.

Abstract: A piezoelectronic device and a method of fabricating the same are disclosed. The piezoelectronic device of the present invention comprises: a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape. The piezoelectronic device of the present invention is advantageous in having excellent elasticity (durability) and excellent piezoelectronical property. The induced current obtained from the piezoelectronic device of the present invention is about 1.5 ?A or above as well as induced voltage being over 1V when the size of the piezoelectronic block is 2.5 mm×1 mm×1 mm (length×width×height).

Abstract: A piezoelectronic device and a method of fabricating the same are disclosed. The piezoelectronic device of the present invention comprises: a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape. The piezoelectronic device of the present invention is advantageous in having excellent elasticity (durability) and excellent piezoelectronical property. The induced current obtained from the piezoelectronic device of the present invention is about 1.5 ?A or above as well as induced voltage being over 1V when the size of the piezoelectronic block is 2.5 mm×1 mm×1 mm (length×width×height).

Abstract: A method of fabricating visible light absorbed TiO2/CNT photocatalysts and photocatalytic filters is disclosed, in which the method of fabricating the photocatalysts comprises steps: (a) providing a substrate; (b) forming a plurality of carbon nanotubes on the substrate; (c) providing a titanium source and an oxygen source; and (d) forming at least one titanium dioxide layer on the carbon nanotubes. The filter of the present invention comprises: a substrate, a plurality of carbon nanotubes, and a titanium dioxide layer. The plurality of carbon nanotubes form on the surface of the substrate, one end of each carbon nanotube connects to the substrate, and the titanium dioxide layer covers the surface of the carbon nanotubes. The filter of the present invention is a visible light absorbed filtering net, the titanium dioxide layer formed on the CNTs has high uniformity and therefore the photodegradation efficiency of the filter is an improvement.

Abstract: A piezoelectronic device and a method of fabricating the same are disclosed. The piezoelectronic device of the present invention comprises: a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape. The piezoelectronic device of the present invention is advantageous in having excellent elasticity (durability) and excellent piezoelectronical property. The induced current obtained from the piezoelectronic device of the present invention is about 1.5 ?A or above as well as induced voltage being over 1V when the size of the piezoelectronic block is 2.5 mm×1 mm×1 mm (length×width×height).