Patents by Inventor Chiung-Yun Chen

Chiung-Yun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTRONIC DEVICE WITH CONDUCTIVE RESONATOR
    Publication number: 20240185105
    Abstract: An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate.
    Type: Application
    Filed: February 16, 2024
    Publication date: June 6, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jiun-Yun LI, Shih-Yuan CHEN, Yao-Chun CHANG, Ian HUANG, Chiung-Yu CHEN
  • Electronic device and manufacturing method thereof
    Patent number: 11934916
    Abstract: An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: March 19, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jiun-Yun Li, Shih-Yuan Chen, Yao-Chun Chang, Ian Huang, Chiung-Yu Chen
  • Use of chitinous materials for inhibiting cellular nitric oxide production
    Patent number: 6653294
    Abstract: The invention relates to a method of reducing nitric oxide production by a cell in vitro or in a mammal by a cell by contacting the cell with chitosan or its derivatives in an amount effective to reduce nitric oxide production in the cell.
    Type: Grant
    Filed: December 8, 2000
    Date of Patent: November 25, 2003
    Assignee: Food Industry Research & Development Institute
    Inventors: Shiaw-Min Hwang, Chiung-Yun Chen, Shan-Shan Chen, Jian-Chyi Chen
  • Use of chitinous materials for inhibiting cellular nitric oxide production
    Publication number: 20010036934
    Abstract: The invention relates to a method of reducing nitric oxide production by a cell in vitro or in a mammal by a cell by contacting the cell with chitosan or its derivatives in an amount effective to reduce nitric oxide production in the cell.
    Type: Application
    Filed: December 8, 2000
    Publication date: November 1, 2001
    Inventors: Shiaw-Min Hwang, Chiung-Yun Chen, Shan-Shan Chen, Jian-Chyi Chen