Patents by Inventor Chiyan Kuan
Chiyan Kuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11662323Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: September 14, 2020Date of Patent: May 30, 2023Assignee: ASML Netherlands B.V.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20230005698Abstract: A system for grounding a mask using a grounding component are provided. Some embodiments of the system include a grounding component comprising a base and an extension protruding from the base and comprising a conductive prong configured to contact a conductive layer of the mask. Some embodiments of the system include a plurality of conductive prongs configured to contact multiple positions of a conductive layer of the mask. Some other embodiments of the system include an extension comprising various shapes.Type: ApplicationFiled: October 21, 2020Publication date: January 5, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Tianming CHEN, Chiyan KUAN, Yixiang WANG, Zhi Po WANG
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Patent number: 11448607Abstract: Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.Type: GrantFiled: December 4, 2017Date of Patent: September 20, 2022Assignee: ASML Netherlands B.V.Inventor: Chiyan Kuan
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Patent number: 11366153Abstract: An epitaxial LED wafer is provided and chip process is processed such that each LED chip on the epitaxial wafer can be probed by an array of probe pin and results can be stored in a database. The epitaxial wafer is then diced on an expandable tape, and a display substrate is provided with driving circuits. The tape is expanded such that a pitch of LED chips on the tape is equal to a pitch of LED chips on display substrate. An array of drop pins will collectively and selectively drop LED chips, from the tape to the display substrate, with the same specification according to the probed results in the database.Type: GrantFiled: January 15, 2020Date of Patent: June 21, 2022Assignees: KKT HOLDINGS SYNDICATEInventors: Tzu-Yi Kuo, Cheng Ta Kao, Chiyan Kuan, Yu-Kuang Tseng
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Publication number: 20210172891Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: September 14, 2020Publication date: June 10, 2021Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 10775325Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: September 28, 2018Date of Patent: September 15, 2020Assignee: ASML Netherlands B.V.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20200286710Abstract: Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.Type: ApplicationFiled: September 25, 2018Publication date: September 10, 2020Inventors: Zhong-wei CHEN, Jack JAU, Wei FANG, Chiyan KUAN
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Publication number: 20200225277Abstract: An epitaxial LED wafer is provided and chip process is processed such that each LED chip on the epitaxial wafer can be probed by an array of probe pin and results can be stored in a database. The epitaxial wafer is then diced on an expandable tape, and a display substrate is provided with driving circuits. The tape is expanded such that a pitch of LED chips on the tape is equal to a pitch of LED chips on display substrate. An array of drop pins will collectively and selectively drop LED chips, from the tape to the display substrate, with the same specification according to the probed results in the database.Type: ApplicationFiled: January 15, 2020Publication date: July 16, 2020Inventors: Tzu-Yi Kuo, Cheng Ta Kao, Chiyan Kuan, Yu-Kuang Tseng
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Publication number: 20200088657Abstract: Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.Type: ApplicationFiled: December 4, 2017Publication date: March 19, 2020Inventor: Chiyan KUAN
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Publication number: 20190170671Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: September 28, 2018Publication date: June 6, 2019Inventors: Guochong WENG, Youjin WANG, Chiyan KUAN, Chung-Shih PAN
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Patent number: 10088438Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: October 31, 2016Date of Patent: October 2, 2018Assignee: HERMES MICROVISION, INC.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 10054556Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: GrantFiled: October 31, 2016Date of Patent: August 21, 2018Assignee: HERMES MICROVISION INC.Inventors: You-Jin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9859089Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: July 10, 2015Date of Patent: January 2, 2018Assignee: HERMES MICROVISION INC.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Publication number: 20170053774Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: ApplicationFiled: October 31, 2016Publication date: February 23, 2017Inventors: You-Jin WANG, Chiyan KUAN, Chung-Shih PAN
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Publication number: 20170052129Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: October 31, 2016Publication date: February 23, 2017Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9572237Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.Type: GrantFiled: June 30, 2015Date of Patent: February 14, 2017Assignee: HERMES MICROVISION INC.Inventors: You-Jin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9485846Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: GrantFiled: December 18, 2014Date of Patent: November 1, 2016Assignee: HERMES MICROVISION INC.Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9436985Abstract: This invention relates to methods and systems for enhance the signal-to-noise ratio of an image scanned by a charged particle beam. In an embodiment, a sequence of grayscales of a pixel is recorded first, extreme values of the sequence of grayscales are then identified and removed, and the remained grayscales are used to determine a nominated grayscale of the pixel.Type: GrantFiled: January 13, 2015Date of Patent: September 6, 2016Assignee: HERMES MICROVISION INC.Inventors: Chiyan Kuan, Joe Wang, Van-Duc Nguyen
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Publication number: 20150325402Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.Type: ApplicationFiled: July 10, 2015Publication date: November 12, 2015Inventors: Guochong Weng, Youjin Wang, Chiyan Kuan, Chung-Shih Pan
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Patent number: 9177758Abstract: The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review.Type: GrantFiled: December 9, 2014Date of Patent: November 3, 2015Assignee: HERMES MICROVISION INC.Inventors: Zhongwei Chen, Jack Jau, Weiming Ren, Chiyan Kuan, Yixiang Wang, Xiaoli Guo, Feng Cao