Abstract: To provide a functional film having excellent bending resistance and stability under high temperature and high humidity conditions, a method for producing the same, and an electronic device including the functional film. A functional film including a resin base, a functional inorganic layer arranged on the resin base, and a hybrid layer arranged on at least one surface of the functional inorganic layer, in which the hybrid layer contains a polysiloxane and fine resin particles.

Abstract: To provide a functional film having excellent bending resistance and stability under high temperature and high humidity conditions, a method for producing the same, and an electronic device including the functional film. A functional film including a resin base, a functional inorganic layer arranged on the resin base, and a hybrid layer arranged on at least one surface of the functional inorganic layer, in which the hybrid layer contains a polysiloxane and fine resin particles.

Abstract: A method for manufacturing a transparent conductive film, said method comprising: forming a compound layer containing a silazane compound on a substrate; supplying energy to the compound layer and thus converting at least a part of the silazane compound into a compound having a siloxane bond to thereby modify the compound layer; and then forming a metal layer, that is configured from silver or an alloy comprising silver as the main component, on the unmodified compound layer or the modified compound layer.

Abstract: Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a substrate in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion strength in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion strength is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film.

Abstract: There is provided a gas barrier film which has high barrier performance and is excellent in bending resistance and smoothness as well as cutting processing suitability; a method for producing the gas barrier film; and an electronic device in which the gas barrier film is used. A gas barrier film, comprising a gas barrier layer unit on at least one surface side of a base, wherein the gas barrier layer unit comprises a first barrier layer formed by a chemical vapor deposition method, a second barrier layer obtained by performing conversion treatment to a coating film formed by coating a silicon compound onto the first barrier layer and an intermediate layer between the first barrier layer and the base.

Abstract: Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a substrate in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion strength in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion strength is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film.

Abstract: An organic thin film transistor comprising a semiconductor layer containing a thiophene oligomer which has a thiophene ring having a substituent and a partial structure constituted by directly connected two or more thiophene rings each having no substituent, and contains three to forty thiophene rings per molecule.

Abstract: A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained.

Abstract: A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

Abstract: A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

Abstract: An organic semiconductor material comprising a compound having a substructure represented by Formula (10): wherein B represents a unit having a thiazole ring, A1 and A2 each independently represent a unit having an alkyl group as a substituent, A3 represents a divalent linking group, nb represents an integer 1-20, n1 and n2 each independently represent an integer of 0-20, respectively, and n3 represents an integer of 0-10.

Abstract: A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained.

Abstract: A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film.

Abstract: An organic semiconductor material comprising a compound having a substructure represented by Formula (10): wherein B represents a unit having a thiazole ring, A1 and A2 each independently represent a unit having an alkyl group as a substituent, A3 represents a divalent linking group, nb represents an integer 1-20, n1 and n2 each independently represent an integer of 0-20, respectively, and n3 represents an integer of 0-10.

Abstract: An organic semiconductor thin film, comprising an organic semiconductor compound, wherein the organic semiconductor thin film is manufactured by a process of forming a film by using a solution or a dispersion at room temperature prepared by mixing the organic semiconductor compound and an organic solvent, and the half width of a diffraction peak having the maximum intensity is 0.4° or less in an X-ray diffraction spectrum of the film.

Abstract: A method for forming an organic semiconductor layer especially for an organic thin film transistor in which a part of the organic semiconductive material thin film formed on a substrate is subjected to a pretreatment and then further subjected to a heating treatment.

Abstract: An organic thin film transistor comprising a semiconductor layer containing a thiophene oligomer which has a thiophene ring having a substituent and a partial structure constituted by directly connected two or more thiophene rings each having no substituent, and contains three to forty thiophene rings per molecule.