Patents by Inventor Chiyui Ahn

Chiyui Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Graphene-inserted phase change memory device and method of fabricating the same
    Patent number: 9583702
    Abstract: Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: February 28, 2017
    Assignees: Samsung Electronics Co., Ltd., The Board of Trustees of the Leland Stanford Junior University
    Inventors: Yongsung Kim, Chiyui Ahn, Aditya Sood, Eric Pop, H.-S. Philip Wong, Kenneth E. Goodson, Scott Fong, Seunghyun Lee, Christopher M. Neumann, Mehdi Asheghi
  • GRAPHENE-INSERTED PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20160276585
    Abstract: Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.
    Type: Application
    Filed: January 29, 2016
    Publication date: September 22, 2016
    Inventors: Yongsung Kim, Chiyui Ahn, Aditya Sood, Eric Pop, H.S. Philip Wong, Kenneth E. Goodson, Scott Fong, Seunghyun Lee, Christopher M. Neumann, Mehdi Asheghi