Patents by Inventor Chizuru Isigaki

Chizuru Isigaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6493057
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: July 2, 1999
    Date of Patent: December 10, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Masakazu Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki, Toru Takayama, Akira Mase
  • Patent number: 5963288
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this stucture, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: October 5, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki
  • Patent number: 5952676
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: June 6, 1997
    Date of Patent: September 14, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki
  • Patent number: 5379139
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of :he substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: July 6, 1992
    Date of Patent: January 3, 1995
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki
  • Patent number: 4874461
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: October 17, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Toshimitsu Konuma, Seiichi Odaka, Toshiharu Yamaguchi, Toshio Watanabe, Osamu Aoyagi, Kaoru Tabata, Chizuru Isigaki, Hiroyuki Sakayori, Ippei Kobayashi, Akio Osabe, Shunpei Yamazaki