Abstract: A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fin together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.

Abstract: A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fin together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.

Abstract: A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.

Abstract: A method for manufacturing a semiconductor device is provided, comprising steps of providing a substrate with an underlying layer formed thereon; forming a gate layer overlying the underlying layer; and forming a multi-layer hard mask layer on the gate layer, and the multi-layer hard mask layer comprising a plurality of material layers and a top hard mask formed on the material layers, wherein the gate layer and the top hard mask contain the same element, such as silicon.

Abstract: A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.

Abstract: The present invention relates to a power generating module and light guiding film thereof. The light guiding film includes a film base and at least one microstructure. The microstructure is disposed on a side surface of the film base. After the input light beams pass through the light guiding film, the total luminous flux of the output light beams with the output angles from 70 to 110 degrees is more than 40% of the total luminous flux of the output light beams with the output angles from 0 to 180 degrees. Therefore, most of the output light beams emit in the normal direction.

Abstract: The present invention relates to a power generating window set and a power generating module thereof. The power generating module includes a light-guiding substrate and at least one photoelectric conversion element. The light-guiding substrate has a plurality of microstructures. The photoelectric conversion element is disposed adjacent to the light-guiding substrate. When a light beam illuminates the light-guiding substrate, the microstructures guide a part of the light beam to the photoelectric conversion element, so as to convert the energy of part of the light beam into electrical energy.