Abstract: The present disclosure relates to a method of chemical vapor deposition (CVD). In some embodiments, a process gas is applied into a vacuum chamber. The process gas is guided downstream the vacuum chamber through a shower head arranged under the gas import, where the process gas is redirected to be laterally unevenly distributed under the shower head. A density of the process gas increases from a center region to a peripheral region of the vacuum chamber. The process gas is then deposited onto a first substrate to form a precursor material with an uneven thickness profile as a result of uneven distribution of the process gas. The shower head has multiple control zones each having a plurality of holes disposed through the shower head.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.

Abstract: The present disclosure relates to a method of chemical vapor deposition (CVD). In some embodiments, a process gas is applied into a vacuum chamber. The process gas is guided downstream the vacuum chamber through a shower head arranged under the gas import, where the process gas is redirected to be laterally unevenly distributed under the shower head. A density of the process gas increases from a center region to a peripheral region of the vacuum chamber. The process gas is then deposited onto a first substrate to form a precursor material with an uneven thickness profile as a result of uneven distribution of the process gas. The shower head has multiple control zones each having a plurality of holes disposed through the shower head.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through with at least two different diameters or densities. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.

Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through with at least two different diameters or densities. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.