Patents by Inventor Choi Chang Hwan

Choi Chang Hwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride-based semiconductor light emitting diode
    Patent number: 7683389
    Abstract: A nitride-based semiconductor LED comprises an anode; a first p-type clad layer having a second n-type clad layer coming in contact with the anode, the first p-type clad layer being formed under the anode such that a portion of the first p-type clad layer comes in contact with the anode; an active layer formed under the first p-type clad layer; a first n-type clad layer having a second p-type clad layer which does not come in contact with the active layer, the first n-type clad layer being formed on the entire lower surface of the active layer; and a cathode formed under the first n-type clad layer and the second p-type clad layer so as to come in contact with a portion of the first n-type clad layer and the second p-type clad layer.
    Type: Grant
    Filed: May 3, 2007
    Date of Patent: March 23, 2010
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Moon Won Ha, Choi Chang Hwan, Hwang Young Nam
  • Nitride-based semiconductor light emitting diode
    Publication number: 20070278499
    Abstract: A nitride-based semiconductor LED comprises an anode; a first p-type clad layer having a second n-type clad layer coming in contact with the anode, the first p-type clad layer being formed under the anode such that a portion of the first p-type clad layer comes in contact with the anode; an active layer formed under the first p-type clad layer; a first n-type clad layer having a second p-type clad layer which does not come in contact with the active layer, the first n-type clad layer being formed on the entire lower surface of the active layer; and a cathode formed under the first n-type clad layer and the second p-type clad layer so as to come in contact with a portion of the first n-type clad layer and the second p-type clad layer.
    Type: Application
    Filed: May 3, 2007
    Publication date: December 6, 2007
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Moon Won Ha, Choi Chang Hwan, Hwang Young Nam