Abstract: A cleaning liquid for cleaning a substrate having a metal exposed on a surface, including a basic compound, an amino acid, and water, in which an isoelectric point (pI) of the amino acid and a pH of the cleaning liquid at 23° C. satisfy a condition of Expression (1). The cleaning liquid contains no nitrogen heterocyclic compound, and a concentration of the basic compound is less than 12% by mass with respect to a total mass of the cleaning liquid pI - 2 < pH < pI + 2.

Abstract: Provided are an etching composition containing (A) an oxidizing agent; (B) a compound capable of releasing fluoride ions or a salt thereof; (C) at least one amine compound selected from the group consisting of an amine compound (c1) having a specific structure, an amine compound (c2) having a specific structure, an amine compound (c3) having a specific structure, piperazine, 1,5,9-triazacyclododecane, 1,4,7-triazacyclononane, cyclen, cyclam, tetraethylenepentamine, and polyethyleneimine, and derivatives thereof, and (D) a corrosion inhibitor, an etching method, and a method for manufacturing a semiconductor substrate.

Abstract: Provided are an etching composition containing (A) an oxidizing agent; (B) a compound capable of releasing fluoride ions or a salt thereof; and (C) a nonionic surfactant containing at least one selected from the group consisting of a compound (c1) having a specific structure and a compound (c2) having a specific structure, an etching method, and a method for manufacturing a semiconductor substrate.

Abstract: A cleaning liquid for cleaning a substrate having a metal exposed on a surface, the cleaning liquid including an alkanol hydroxylamine, a chelating agent, and water, in which the cleaning liquid has a pH of less than 10 at 23° C.

Abstract: A silicon carbide single crystal substrate processing method by which the thickening of a desired surface of a SiC single crystal substrate can be achieved in a short time under mild conditions such as room temperature; and a silicon carbide single crystal substrate processing system applicable to the processing method. The silicon carbide single crystal substrate processing method includes performing anodic oxidation, in which a voltage is applied using the silicon carbide single crystal substrate as an anode while at least one main surface of the silicon carbide single crystal substrate is brought into contact with an electrolyte solution that does not contain fluorine anions, to thereby form an oxide film on the main surface.

Abstract: A processing method for a silicon carbide single crystal substrate whereby it is possible to perform thick film processing of a desired surface of a SiC single crystal substrate in a short time under mild conditions such as room temperature, and a silicon carbide single crystal substrate processing system that can be applied to the processing method. The processing method for a silicon carbide single crystal substrate includes providing a silicon carbide single crystal substrate having a silicon carbide semiconductor layer epitaxially grown on a first main surface; bringing the first main surface into contact with an electrolyte solution containing fluorine anions while applying a voltage to the silicon carbide single crystal substrate as an anode, performing anodization, thereby forming a film containing oxygen on the first main surface; and removing the film by dry etching, ashing, or CMP.

Abstract: An etching solution having excellent etching selectivity, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by the following formula (1), a carboxylic acid as a solvent, and water, and R1 and R2 each independently represents a hydrogen atom, a halogen atom, an alkyl group, a fluoroalkyl group, or an alkoxy group, and R3 and R4 each independently represents a halogen atom, a hydroxy group, an alkyl group, a fluoroalkyl group, or an alkoxy group.

Abstract: Provided is an electrode material which is suitable for use as a material for forming electrodes for use in lithium ion secondary batteries, etc. and which makes it possible to heighten the rate characteristics of batteries. The electrode material is characterized by comprising a polymer having, in a side chain, a fluoflavin skeleton such as that shown by the formula and an inorganic active material, the polymer being contained in an amount of 1 mass % or less with respect to the solid components.

Abstract: A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water.

Abstract: A cleaning liquid for cleaning a substrate having a first metal atom-containing layer that contains ruthenium and a second metal atom-containing layer that contains a metal atom other than ruthenium, both of the layers contacting each other, and at least one of the first metal atom-containing layer and the second metal atom-containing layer is exposed on a surface. The cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, and at least one amine other than the hydrazine compound and a quaternary hydroxide.

Abstract: Provided is an electrode material which is suitable for use as a material for forming electrodes for use in lithium ion secondary batteries, etc. and which makes it possible to heighten the rate characteristics of batteries. The electrode material is characterized by comprising a polymer having, in a side chain, a fluoflavin skeleton such as that shown by the formula and an inorganic active material, the polymer being contained in an amount of 1 mass % or less with respect to the solid components.