Patents by Inventor Chok Ho

Chok Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching processes used in MEMS production
    Patent number: 8308962
    Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: November 13, 2012
    Assignee: QUALCOMM MEMS Technologies, Inc.
    Inventors: Philip Floyd, Chok Ho, Teruo Sasagawa, Xiaoming Yan
  • ETCHING PROCESSES USED IN MEMS PRODUCTION
    Publication number: 20090071932
    Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
    Type: Application
    Filed: September 12, 2008
    Publication date: March 19, 2009
    Applicant: Qualcomm MEMS Technologies, Inc.
    Inventors: Philip Floyd, Chok Ho, Teruo Sasagawa, Xiaoming Yan
  • ETCHING PROCESSES USED IN MEMS PRODUCTION
    Publication number: 20090071933
    Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
    Type: Application
    Filed: September 12, 2008
    Publication date: March 19, 2009
    Applicant: Qualcomm MEMS Technologies, Inc.
    Inventors: Philip Floyd, Evgeni Gousev, David Heald, Ben Ward Hertzler, Chok Ho, Teruo Sasagawa, Xiaoming Yan, Todd Lyle Zion
  • Use of ammonia for etching organic low-k dielectrics
    Publication number: 20050003676
    Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.
    Type: Application
    Filed: January 21, 2004
    Publication date: January 6, 2005
    Inventors: Chok Ho, Kuo-Lung Tang, Chung-Ju Lee