Abstract: The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure.

Abstract: The present invention provides a metal-insulator-metal capacitor, which includes: a substrate, a copper-based bottom electrode overlying the substrate, wherein the copper based bottom electrode is doped with rhenium nitride or ruthenium nitride, a top electrode overlying the copper based bottom electrode, and a capacitor insulator between and adjoining the copper based bottom electrode and the top electrode.

Abstract: The present invention provides a semiconductor device, including a silicon-containing material, a conductive layer deposited on the silicon-containing material, and a diffusion barrier layer interposed between the silicon-containing material and the conductive layer, wherein the diffusion barrier layer contains a rare earth scandate. The present invention further provides a damascene structure containing the rare earth scandate as diffusion barrier.

Abstract: A whisker-free coating structure and a method for fabricating the same are disclosed. The whisker-free coating structure includes a substrate, a tungsten doped copper layer overlaying the substrate, and a lead-free tin layer overlaying the tungsten doped copper layer.

Abstract: An electrically conductive material includes: a supersaturated solid solution of a polycrystalline copper alloy having a composition represented by the formula: Cu100-x-yMxNy; wherein x and y are atomic ratios; wherein 0<x?2.0 and 0?y?2.0; wherein M is selected from Ru, Re, Ho, and combinations thereof; and wherein the supersaturated solid solution includes M precipitates formed at grain boundaries of the polycrystalline copper alloy when y is equal to zero, and includes M precipitates and MN particles formed at the grain boundaries of the polycrystalline copper alloy when y is not zero.

Abstract: A copper layer on a substrate has a copper seed layer and an interface. The copper seed layer contains insoluble substances that are insoluble with copper. The interface is formed between the copper seed layer and the substrate. The copper layer replaces a conventional barrier and has significantly improved thermal stability to obtain some properties such as a fine microstructure, high thermal stability and an excellent low electrical resistivity. The copper seed layer is formed by a sputtering process in a vacuum and clean atmosphere with an operational gas of argon or a mixture of argon and a trace-amount of nitrogen. The interface is formed when the copper layer on the substrate are annealed. The insoluble substances in the copper seed layer are in a range of 0.5 to 3.5 atom % and are high-temperature metals and high-temperature metal nitrides with the nitrides being than 2.0 atom %.

Abstract: A copper film containing tungsten nitride is manufactured by co-sputtering method under an Ar/N2 atmosphere and has a composition in ratio of tungsten nitride contained in the copper layer in atomic ratios of more than 97.5% in copper, 0.5 to 1.5% in tungsten and of less than 2.0% in nitrogen. By adding the tungsten nitride, the copper film has improvements in thermal stability, good electrical conductivity and low electrical leakage current. Moreover, the copper film attached on a silicon substrate will generate a self-passivated silicon compound layer to serve as a diffusion barrier layer between the copper film and the silicon substrate during annealing.