Abstract: Provided are a data transmission device and a data transmission method, which are applied to a field of an information technology. The data transmission device includes: a signal conversion module (30) and a signal transmission module (20), wherein the signal conversion module (30) is configured to convert, at a data transmitting end, an electrical signal containing a data information into a magnon signal containing the data information; the signal transmission module (20) is configured to transmit the magnon signal containing the data information to a data receiving end; and the signal conversion module (30) is further configured to convert, at the data receiving end, the magnon signal containing the data information into the electrical signal containing the data information. The data transmission method includes transmitting the data by using the magnon signal, and no voltage or current is required in a process of transmitting the data.

Abstract: Provided is a cache memory, including: a first field-effect transistor, a field-like spin torque layer underneath a magnetic tunnel junction, an electrode, and a second field-effect transistor sequentially arranged and connected; wherein the first field-effect transistor is configured to provide a writing current and to control the on-off of the writing current through a gate electrode; the field-like spin torque layer is configured to generate field-like spin torques for switching a first ferromagnetic layer of the magnetic tunnel junction; the magnetic tunnel junction includes a first ferromagnetic layer, a tunneling layer, a second ferromagnetic layer and a pinning layer arranged sequentially; the electrode is configured to connect the cache memory with the second field-effect transistor; and the second field-effect transistor is configured to control the on-off of the second field-effect transistor through the gate electrode to read the resistive state of the magnetic tunnel junction.

Abstract: The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an additional external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and keeps stable when the current is removed.

Abstract: Voltage controlled magnetic components are described. The magnetic components include a thin layer of ferromagnet adjacent to an oxide layer. The magnetic properties of the ferromagnet may be controlled in a reversible manner via application of an external electric field and voltage-induced reversible oxidation of the ferromagnet.

Abstract: The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and may be kept to be stable when the current is removed.

Abstract: Voltage controlled magnetic components are described. The magnetic components include a thin layer of ferromagnet adjacent to an oxide layer. The magnetic properties of the ferromagnet may be controlled in a reversible manner via application of an external electric field and voltage-induced reversible oxidation of the ferromagnet.