Abstract: A plurality of devices, such as devices that are utilized for implementing radio frequency applications, can be formed in the same substrate. Each of these devices may be formed over a triple well that includes at least one well capable of being biased. Each of the wells is coupled to a well bias through a resistor. In some embodiments, a plurality of wells operating at a relatively high frequency may be connected to the same bias potential, each through separate resistors. The noise coupling may be reduced through the use of the bias resistors.

Abstract: A power amplifier utilizes cascode arrangements to achieve target performance levels for a power amplifier, such as the type used in wireless communication devices. A negative resistance circuit is provided for the cascode arrangement such that high gain, or oscillation, is promoted during operation of the power amplifier. In one embodiment, the negative resistance circuit includes cross-coupling transistors. Various features are provided in order to reduce the susceptibility of the power amplifier to voltage breakdown while maintaining good performance.

Abstract: An RF circuit may be formed over a triple well that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing the capacitive coupling from the RF circuits to the substrate, improving the self-resonance frequency of inductors and reducing the coupling of unwanted signals and noise from the underlying substrate to the active circuits and passive components such as the capacitors and inductors. As a result, radio frequency devices, such as radios, cellular telephones and transceivers such as Bluetooth transceivers, logic devices and Flash and SRAM memory devices may all be formed in the same integrated circuit die using CMOS fabrication is processes.

Abstract: A plurality of devices, such as devices that are utilized for implementing radio frequency applications, can be formed in the same substrate. Each of these devices may be formed over a triple well that includes at least one well capable of being biased. Each of the wells is coupled to a well bias through a resistor. In some embodiments, a plurality of wells operating at a relatively high frequency may be connected to the same bias potential, each through separate resistors. The noise coupling may be reduced through the use of the bias resistors.

Abstract: An integrated inductive element may be formed over a substrate. A triple well may be defined in a star-shape, in one embodiment, in the substrate beneath the integrated inductive element in order to reduce eddy current losses arising from magnetic coupling between integrated inductors associated with the same integrated circuit.

Abstract: An RF circuit may be formed over a triple well that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing the capacitive coupling from the RF circuits to the substrate, improving the self-resonance frequency of inductors and reducing the coupling of unwanted signals and noise from the underlying substrate to the active circuits and passive components such as the capacitors and inductors. As a result, radio frequency devices, such as radios, cellular telephones and transceivers such as Bluetooth transceivers, logic devices and Flash and SRAM memory devices may all be formed in the same integrated circuit die using CMOS fabrication is processes.

Abstract: An RF circuit may be formed over a triple well that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing the capacitive coupling from the RF circuits to the substrate, improving the self-resonance frequency of inductors and reducing the coupling of unwanted signals and noise from the underlying substrate to the active circuits and passive components such as the capacitors and inductors. As a result, radio frequency devices, such as radios, cellular telephones and transceivers such as Bluetooth transceivers, logic devices and Flash and SRAM memory devices may all be formed in the same integrated circuit die using CMOS fabrication processes.

Abstract: An integrated inductive element may be formed over a substrate. A triple well may be defined in a star-shape, in one embodiment, in the substrate beneath the integrated inductive element in order to reduce eddy current losses arising from magnetic coupling between integrated inductors associated with the same integrated circuit.

Abstract: An antenna system for use in wireless communication systems that is based on a pair of monopole antennas, which are electrically isolated from each other and arranged generally orthogonally. A feed circuit is coupled to the first and second monopole antennas, which connects them to a host system. Also, a ground plane conductor extends generally between the feeds for the first and second monopole antennas to improve isolation. The monopole antennas are formed on a printed circuit board, formed on first and second dielectric layers. A ground plane conductive film is disposed between the dielectric layers. The first monopole antenna is formed on an outside surface of the first dielectric layer, and the second monopole antenna is formed on the outside surface of the second dielectric layer. The second monopole antenna is arranged generally orthogonally to the first monopole antenna.