Abstract: A method for manufacturing a power bus on a chip, where the power bus has slits generated therein. The present invention relates to a method to manufacture a power bus in which the reference to a layout data base shows the coordinate location of the power buses in the chip. A height and width for the power bus is calculated based on its coordinates. Based on the height and width of the power buses and the predetermined size and spacing between power slits, a number of power slits to be generated is determined. These power slits are then generated by adding the power slits to the power bus in the coordinates of the layout database. The method of the present invention also generates power slits for use in manufacturing power buses on a chip for cases in which the power buses overlap.

Abstract: A buffer memory architecture, method, and chip floor plan allows for significant reduction in the physical area required for a buffer memory of any given size in a microelectronic device. Buffer applications wherein random access to the buffered data is not required use a CMOS dynamic serial memory with p-channel devices supplied with a voltage less positive than the voltage supplied to their respective n-wells. In a particular embodiment, three memory stages are used in a cascaded fashion. The first and third memory stages store data on a parallel basis, while the second memory stage stores data on a serial basis. The second memory stage can be fabricated using much less chip area per bit than the first and third memory stages. Significant area reduction is achieved because the second memory stage eliminates addressing overhead associated with conventional high-density memory schemes, and low voltage power supplies permit relaxation of latch-up prevention layout rules.

Abstract: A buffer memory architecture, method, and chip floor plan allows for significant reduction in the physical area required for a buffer memory of any given size in a microelectronic device. Buffer applications wherein random access to the buffered data is not required use a CMOS dynamic serial memory with p-channel devices supplied with a voltage less positive than the voltage supplied to their respective n-wells. In a particular embodiment, three memory stages are used in a cascaded fashion. The first and third memory stages store data on a parallel basis, while the second memory stage stores data on a serial basis. The second memory stage can be fabricated using much less chip area per bit than the first and third memory stages. Significant area reduction is achieved because the second memory stage eliminates addressing overhead associated with conventional high-density memory schemes, and low voltage power supplies permit relaxation of latch-up prevention layout rules.

Abstract: An integrated circuit (IC) device implemented according to an architectural design that specifies that the IC device is required to have one functional module, to perform a first function, connected to another functional module, to perform a second function. The IC device includes a first IC chip having a plurality of first functional modules implemented thereon. Some of the first functional modules are defective and others of the first functional modules are non-defective. At least one of the non-defective first functional modules is operable to perform the first function. The IC device also includes a second IC chip having a plurality of second functional modules implemented thereon. Some of the second functional modules are defective and others of the second functional modules are non-defective. At least one of the non-defective second functional modules is operable to perform the second function.

Abstract: A simulation system for a microelectronic device having two or more functional modules from a megacell library, the simulation system utilizing actual physically implemented versions of each functional module (or block) from the megacell library so as to provide a more accurate and much faster simulation than a comparable software- or field programmable gate array-based simulation. The simulation system comprises means for providing a physically-based implementation of each functional module of a proposed design for a microelectronic device, the physically-based implementation being disposed on one or more test microelectronic devices used by the simulation system. Interconnecting means is used for electrically coupling together each of the physically-based implemented functional modules so as to produce the proposed design of the proposed microelectronic device.

Abstract: An intersect area of an apparatus having a plurality of power buses, and a method for making the same. An intersect area is defined by an overlap region where a first and second power bus overlap. The power buses can overlap at orthogonal and non-orthogonal angles. Each power bus has a vertical and horizontal axis, along which power flows. Power slits are located along two axes. The intersect area of the apparatus is void of power slits, but has holes at intersection points of a set of pointer lines. The pointer lines are imaginary lines emanating from the power slits.

Abstract: A power bus having power slits embodied therein. The present invention includes three embodiments. The first embodiment is directed to generic power buses. Each power bus has a first axis, along which power flows, and a second axis. Each of the power slits have an identical maximum width and minimum length. Power slits located along the first axis are separated from one another by a first minimum value, and power slits located along the second axis are separated from one another by a second minimum value. The first and second minimum values are selected as a function of electron flow and photolithography. The second embodiment is a continuation of the first embodiment and is directed to an apparatus with a plurality of power buses in which two buses overlap at 90.degree. angles. The overlap area of the apparatus is void of power slits, but has holes at intersection points of a set of pointer lines. The pointer lines are imaginary lines eminating from the power slits.

Abstract: A microelectronic device according to the present invention is made up of two or more functional units, which are all disposed on a single chip, or die. The present invention works on the strategy that all of the functional units on the die are not, and do not need to be operational at a given time in the execution of a computer program that is controlling the microelectronic device. The present invention on a very rapid basis (typically a half clock cycle), therefore, turns on and off the functional units of the microelectronic device in accordance with the requirements of the program being executed. This power down can be achieved by one of three techniques; turning off clock inputs to the functional units, interrupting the supply of power to the functional units, or deactivating input signals to the functional units.

Abstract: A system and method for generating and optimizing clock signals with non-overlapping edges on a chip using a unique programmable on-chip clock generator. Overlapping of the edges of the clocking signals is avoided by adjusting an amount of delay introduced in the on-chip clock generator circuit. The amount of delay is adjusted by programming the on-chip clock generator using either hardware and/or software programming. In hardware programming, the amount of delay adjusted by physically altering the composition of delay elements in the on-chip clock generator. In software programming, the delay is adjusted using software commands to control the operation of delay elements in the on-chip clock generator, or to select the paths that delay the signals.

Abstract: An automatic method of generating slits in power buses on a chip. The present invention includes three embodiments. The first embodiment is directed to a generic method of generating power slits. Once bus dimensions are identified, predetermined parameters for optimal power slit size and number are used to automatically generate a power slit layer for the mask database. The second embodiment is a continuation of the first embodiment and is directed to a method of generating power slits for an orthogonal corner case; where two buses overlap at 90.degree. angles. This is performed by locating all corner cases. Power slits are removed within a cross (corner/intersect) area of overlapping buses. At this point power slits from overlapping buses are extended across the corner/intersect area. The extension lines are logically ANDed together resulting in points within the corner/intersect area where the extension lines intersect.

Abstract: An input protection arrangement for diverting current from high voltages due to, for example electrostatic discharges into a bonding pad of an integrated circuit chip. The chip has a bonding pad connected to a conducting path and to a source or drain region of an insulated gate field effect transistor, the other region being connected to a power bus on the chip. The conducting path runs between the source and drain regions and operates as the gate terminal of the transistor. The conducting path is insulated from the surface of the chip by a field oxide insulating layer of a substantially uniform thickness to prevent rupture of the oxide between the gate and the source and drain regions in the event of high-voltages. The source and drain regions include regions of conventional doping levels having depths corresponding to the depths of the other corresponding regions on the chip, surrounded by large wells of lower doping levels.

Abstract: An input protection arrangement for diverting current from high voltages due to, for example electrostatic discharges into a bonding pad of an integrated circuit chip. The chip has a bonding pad connected to a conducting path and to a source or drain region of an insulated gate field effect transistor, the other region being connected to a power bus on the chip. The conducting path runs between the source and drain regions and operates as the gate terminal of the transistor. The conducting path is insulated from the surface of the chip by a field oxide insulating layer of a substantially uniform thickness to prevent rupture of the oxide between the gate and the source and drain regions in the event of high-voltages. The source and drain regions include regions of conventional doping levels having depths corresponding to the depths of the other corresponding regions on the chip, surrounded by large wells of lower doping levels.