Abstract: Proposed is a gas sensing device. The gas sensing device includes a housing including an opening part through which a target gas to be sensed enters an inner space thereof, a sensor unit disposed in the inner space of the housing, and a connection passage connecting a first opening and a second opening that are formed in the housing such that the first opening and the second opening are open toward the inner space of the housing. According to the present disclosure, there is an effect that the gas sensing device capable of measuring a concentration of a gas with a high response speed and a high accuracy may be provided even if a pressure of a space inside the housing where the sensor unit is disposed increases.

Abstract: The present invention couples a housing including a gas separation membrane to a sensor unit capable of detecting the concentration of hydrogen gas such that liquid cannot permeate a closed space within the housing and only hydrogen gas dissolved in the liquid can permeate the closed space through the gas separation membrane, and detachably couples such a hydrogen sensor element to an opening of a container in which the liquid is held. Accordingly, the present invention can measure the concentration of dissolved hydrogen gas in a simple manner.

Abstract: The present invention couples a housing including a gas separation membrane to a sensor unit capable of detecting the concentration of hydrogen gas such that liquid cannot permeate a closed space within the housing and only hydrogen gas dissolved in the liquid can permeate the closed space through the gas separation membrane, and detachably couples such a hydrogen sensor element to an opening of a container in which the liquid is held. Accordingly, the present invention can measure the concentration of dissolved hydrogen gas in a simple manner.

Abstract: Provided is a hydrogen measurement sensor capable of monitoring a content of hydrogen within molten metal in real-time using an aluminum or magnesium alloy casting method, and, more particularly, a hydrogen measurement sensor having a junction structure of a solid oxygen ion conductor and a solid hydrogen ion conductor in molten metal capable of measuring a content of hydrogen within aluminum-magnesium alloy-molten metal using a new method which generates a fixed concentration of oxygen gas from a solid reference material at a high temperature by replacing a reference material of a standard gas method which is difficult to handle with a solid reference material or external air which is easy to handle or has the same effect as that of the gas reference material by using a feature in which the external air contains a predetermined pressure (0.21 atm) of oxygen.

Abstract: Provided is a hydrogen measurement sensor capable of monitoring a content of hydrogen within molten metal in real-time using an aluminum or magnesium alloy casting method, and, more particularly, a hydrogen measurement sensor having a junction structure of a solid oxygen ion conductor and a solid hydrogen ion conductor in molten metal capable of measuring a content of hydrogen within aluminum-magnesium alloy-molten metal using a new method which generates a fixed concentration of oxygen gas from a solid reference material at a high temperature by replacing a reference material of a standard gas method which is difficult to handle with a solid reference material or external air which is easy to handle or has the same effect as that of the gas reference material by using a feature in which the external air contains a predetermined pressure (0.21 atm) of oxygen.

Abstract: The present invention relates to a NOx sensor and a calculating method of total NOx concentration using the same, and more particularly, to a NOx sensor which has improved sensitivity to NO and NO2 and simply calculates NO, NO2 and total NOx concentration, and a calculating method of total NOx concentration using the same. The NOx sensor of the present invention comprises an oxygen ion conductive solid electrolyte 10; an oxide sensing electrode 20 formed at the oxygen ion conductive solid electrolyte 10; a noble metal electrode 30; and a lead line 40 connected to each of the oxygen ion conductive solid electrolyte 10 or the oxide sensing electrode 20 or the noble metal electrode 30, wherein the oxygen ion conductive solid electrolyte 10 and the oxide sensing electrode 20 form at least two interfaces.

Abstract: The present invention relates to a method of forming an interconnection for a semiconductor device using copper. The method of the invention, including the steps of forming an insulating layer having a groove on a semiconductor substrate containing active elements; forming and depositing a copper thin film on the insulating layer including the groove; and reflowing the copper thin film, may reflow the copper thin film deposited on the semiconductor substrate having a high-step surface for less than 30 min. below 450.degree. C., which show improved annealing conditions as compared with the conventional art. In addition, by reducing consumption of thermal energy in accordance with a low-temperature process, copper is restrained from being rapidly diffused through a silicon substrate, electrodes, etc. when forming the interconnection for the semiconductor device, thus improving productivity of the semiconductor devices.

Abstract: A method of forming a thin film of copper on a substrate includes a first step of conducting a chemical vapor deposition (CVD) process using a metal organic (MO) source while applying a first bias voltage to the surface of the substrate and a second step of conducting a chemical vapor deposition process using a metal organic source while applying a second bias voltage to the substrate, wherein the second bias voltage is opposite in polarity to the first bias voltage. The process may include a third step of conducting a chemical vapor deposition process using a metal organic source while applying a third bias voltage to the substrate, where the third bias voltage has the same polarity as the first bias voltage.