Abstract: A display device includes: a first alignment electrode and a second alignment electrode on a substrate, the first and second alignment electrodes extending in a first direction and being spaced apart from each other; an amorphous silicon layer on the first alignment electrode and the second alignment electrode, the amorphous silicon layer having an insulating portion covering the first alignment electrode and an electrode portion covering the second alignment electrode, the electrode portion of the amorphous silicon layer including an N-type dopant; a light emitting element on the amorphous silicon layer, one end of the light emitting element being on the insulating portion and another end of the light emitting element contacting the electrode portion of the amorphous silicon layer; a first insulating layer on the light emitting element and extending in the first direction; and a first electrode contacting the one end of the light emitting element.

Abstract: A display device includes a first substrate including a display area and a non-display area, first banks spaced apart from each other in the display area and in the non-display area on the first substrate, electrodes spaced apart from each other on the first banks in the display area, dummy electrodes spaced apart from each other on the first banks in the non-display area, a first pattern between the electrodes in the display area, a second pattern between the dummy electrodes in the non-display area, a first light emitting element on the first pattern, a second light emitting element on the second pattern, contact electrodes respectively on the electrodes in the display area to contact one end of the first light emitting element, and dummy contact electrodes respectively on the dummy electrodes in the non-display area to contact one end of the second light emitting element.

Abstract: A display device includes a thin film transistor layer including at least one transistor on a substrate; a first electrode on the thin film transistor layer and connected to the at least one transistor; a second electrode spaced from the first electrode on the thin film transistor layer; a plurality of light emitting elements connected to the first electrode and the second electrode; and an electrode pattern on a same layer as the first electrode and the second electrode and overlapping the plurality of light emitting elements in a thickness direction.

Abstract: A method of manufacturing a display device may include sequentially forming a first conductive layer, a second conductive layer including copper (Cu), a third conductive layer, and a fourth conductive layer on a substrate, patterning the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer together to form a conductive pattern including a first layer, a second layer, a third layer, and a fourth layer sequentially on the substrate, removing the fourth layer of the conductive pattern, forming a protective layer covering at least a sidewall of the conductive layer on the substrate, and forming a display element on the protective layer.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device includes a substrate including a display area and a non-display area around the display area; and a display element layer on the substrate. The display element layer may include first and second electrodes extending in a first direction and spaced apart from each other in a second direction that is different from the first direction; a first light emitting element electrically coupled to the first and second electrodes; a first dummy electrode extending in the first direction and spaced apart from the first and second electrodes; second dummy electrodes spaced apart from each other in the first direction and spaced apart from the first electrode, the second electrode, and the first dummy electrode; and a second light emitting element electrically coupled to the first dummy electrode and the second dummy electrodes.

Abstract: A display includes a substrate, a first electrode base layer and a second electrode base layer spaced from each other on the substrate, a first electrode on the first electrode base layer and a second electrode on the second electrode base layer, a first inner bank between the first electrode base layer and the first electrode and a second inner bank between the second electrode base layer and the second electrode, and a light emitting element between the first electrode and the second electrode, at least one end portion of the light emitting element being electrically connected to the first electrode or the second electrode, wherein a side surface of one end portion of each of the first and second electrode base layers is at the same line as a side surface of an end portion of a corresponding one of the first and second electrodes.

Abstract: A display device includes a substrate, a first inner bank and a second inner bank on the substrate and spaced apart from each other, a first electrode on the first inner bank and a second electrode on the second inner bank, and a light emitting element between the first inner bank and the second inner bank, the light emitting element being electrically coupled to the first electrode and the second electrode, wherein the first inner bank comprises a first side surface facing the second inner bank, the second inner bank comprises a second side surface facing the first side surface, and the first side surface and the second side surface are respectively recessed into the first inner bank and the second inner bank, to have a curved shape.

Abstract: A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a first light emitting element disposed between the first electrode and the second electrode, a second light emitting element disposed on the first electrode and spaced apart from the first light emitting element, and an insulating layer disposed on the first electrode and overlapping the second light emitting element. The insulating layer includes at least one contact hole which penetrates the insulating layer to expose a part of the first electrode.

Abstract: A display device includes a first display substrate and a second display substrate. The first display substrate includes a first base, a first electrode disposed on the first base, a second electrode spaced apart from the first electrode, and a light emitting element disposed between the first electrode and the second electrode. The second display substrate faces the first display substrate and is configured to receive light emitted from the light emitting element. The second display substrate includes a second base, a first color filter disposed on a surface of the second base, and a first wavelength conversion pattern disposed on the first color filter. The first wavelength conversion pattern includes a first surface facing the first display substrate, and a second surface facing the first surface and the first color filter. The first surface includes a curved surface portion recessed toward the second surface.

Abstract: A display device includes a substrate, a first electrode and a second electrode which are spaced apart from each other on the substrate, a first insulating pattern on the substrate to cover at least a portion of each of the first electrode and the second electrode, a light emitting element between the first electrode and the second electrode on the first insulating pattern, a first contact electrode in contact with the first electrode and one end portion of the light emitting element, a second contact electrode in contact with the second electrode and another end portion of the light emitting element, and a second insulating pattern on the light emitting element and of which at least a portion is in contact with each of the first contact electrode and the second contact electrode, wherein the second insulating pattern includes a first upper surface not in contact with the first contact electrode or the second contact electrode.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A method of manufacturing a display device, includes providing a substrate including a first stepped part, forming a metal layer on the substrate and the first stepped part, forming an organic layer pattern on the metal layer at a position corresponding to a sidewall of the stepped part, forming a photosensitive layer on the metal layer and the organic layer pattern, patterning the photosensitive layer to form a photosensitive layer pattern adjacent to the organic layer pattern, and forming a metal line by removing the organic layer pattern and an exposed portion of the metal layer through an etching process using the photosensitive layer pattern as a mask.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A method of manufacturing a display device, includes providing a substrate including a first stepped part, forming a metal layer on the substrate and the first stepped part, forming an organic layer pattern on the metal layer at a position corresponding to a sidewall of the stepped part, forming a photosensitive layer on the metal layer and the organic layer pattern, patterning the photosensitive layer to form a photosensitive layer pattern adjacent to the organic layer pattern, and forming a metal line by removing the organic layer pattern and an exposed portion of the metal layer through an etching process using the photosensitive layer pattern as a mask.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A thin film transistor substrate, a display device including the same, and a method of manufacturing a thin film transistor substrate. The thin film transistor substrate includes: a base plate including a first area and a second area; a nano uneven pattern formed on one side of the base plate in the first area; a wire grid pattern formed on the ne side of the base plate in the second area; a gate electrode disposed on and overlapping the wire grid pattern; and one of a source electrode and a drain electrode disposed on the gate electrode and overlapping the wire grid pattern.

Abstract: A method for manufacturing a display device includes forming a plurality of light blocking patterns on a first surface of a transparent substrate, wherein a first light blocking pattern of the plurality of light blocking patterns has a different line width than a second light blocking pattern of the plurality of light blocking patterns. An insulating layer is formed on the first surface of the transparent substrate and the light blocking patterns. A conductive layer is formed on the insulating layer. A photo-resist layer is formed on the conductive layer. The photo-resist layer is exposed with ultraviolet rays through a second surface of the transparent substrate, wherein the first and second surfaces of the transparent substrate are opposite to each other. The photo-resist layer is developed. The conductive layer is etched using the photo-resist layer as a mask. The photo-resist layer is removed.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A method for manufacturing a display device includes forming a plurality of light blocking patterns on a first surface of a transparent substrate, wherein a first light blocking pattern of the plurality of light blocking patterns has a different line width than a second light blocking pattern of the plurality of light blocking patterns. An insulating layer is formed on the first surface of the transparent substrate and the light blocking patterns. A conductive layer is formed on the insulating layer. A photo-resist layer is formed on the conductive layer. The photo-resist layer is exposed with ultraviolet rays through a second surface of the transparent substrate, wherein the first and second surfaces of the transparent substrate are opposite to each other. The photo-resist layer is developed. The conductive layer is etched using the photo-resist layer as a mask. The photo-resist layer is removed.