Abstract: Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

Abstract: Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]: SiNx??[Chemical Formula 1] (wherein 0<x?1.5).

Abstract: Disclosed is a method of manufacturing an epitaxy oxide thin film of enhanced crystalline quality, and an epitaxy oxide thin film manufactured thereby according to the present invention. With respect to the manufacturing method of the epitaxy oxide thin film, which epitaxially grows an orientation film with an oxide capable of being oriented to (001), (110), and (111) on a single crystal Si substrate, because time required for raising a temperature of the orientation film up to an annealing temperature at room temperature is extremely minimized, thermal stress arising from the large difference in thermal expansion coefficients between the substrate and the orientation film is controlled, so crystalline quality of the epitaxy oxide thin film can be enhanced. Moreover, various epitaxial functional oxides are integrated into the thin film of enhanced crystalline quality so that a novel electronic device can be embodied.

Abstract: Provided is an apparatus for generating direct current using continuous polarization change of piezoelectric materials. For example, a piezoelectric direct current generator includes a first electrode, a polarized piezoelectric material layer disposed on a first surface of the first electrode, and a second electrode disposed on a surface opposite to the first electrode and coupled to move along the piezoelectric material layer while pressing the piezoelectric material layer.

Abstract: A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.

Abstract: Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below, BexM1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

Abstract: A method of manufacturing an electrode layer and a method of manufacturing a capacitor using the same are provided. The method of manufacturing the electrode layer includes performing a first sub-cycle sequentially providing a tin precursor and an oxygen source on a substrate, performing a second sub-cycle sequentially providing a tin precursor, a tantalum precursor, and an oxygen source on the substrate on which the first sub-cycle is performed, and repeating a cycle including the first sub-cycle and the second sub-cycle to form a tantalum-doped tin oxide layer on the substrate. A tantalum concentration in the tantalum-doped tin oxide layer is determined by the tin precursor provided in the second sub-cycle.

Abstract: The present disclosure provides a transparent thin film heater including: a metal layer; and a transparent conductive oxide layer, wherein the transparent conductive oxide layer includes a composition represented by the following Chemical Formula 1 and is doped with nitrogen: ZnxSn1?xO2??[Chemical Formula 1] wherein 0<x?0.12.

Abstract: Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

Abstract: Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]: SiNx ??[Chemical Formula 1] (wherein 0<x?1.5).

Abstract: A method of manufacturing an electrode layer and a method of manufacturing a capacitor using the same are provided. The method of manufacturing the electrode layer includes performing a first sub-cycle sequentially providing a tin precursor and an oxygen source on a substrate, performing a second sub-cycle sequentially providing a tin precursor, a tantalum precursor, and an oxygen source on the substrate on which the first sub-cycle is performed, and repeating a cycle including the first sub-cycle and the second sub-cycle to form a tantalum-doped tin oxide layer on the substrate. A tantalum concentration in the tantalum-doped tin oxide layer is determined by the tin precursor provided in the second sub-cycle.

Abstract: Disclosed is a thermoelectric composite material includes a thermoelectric material including crystal grains; and a MXene inserted at boundaries of the crystal grains consisting of the thermoelectric material. Accordingly, the thermoelectric composite material may have a reduced thermal conductivity and an increased electrical conductivity. Furthermore, mechanical properties of the thermoelectric composite material may be improved. Thus, the thermoelectric composite material may improve the thermoelectric ability of a thermoelectric module including the same. A method of manufacturing the thermoelectric composite material includes coating MXene on a surface of a thermoelectric material powder including crystal grains; and sintering the thermoelectric material powder coated with the MXene to form a sintered body including the MXene inserted at boundaries of the crystal grains consisting of the thermoelectric material.

Abstract: The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

Abstract: Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

Abstract: A method for manufacturing a thermoelectric material is provided. According to the method, a first shaped body is formed from a thermoelectric powder, of which a crystal has a layer structure. An extruded body is formed by extruding the first shaped body. A plurality of cut-off pieces are formed by cutting the extruded body along a cross-section perpendicular to an extrusion direction. A second shaped body is formed by stacking and pressing the cut-off pieces along a direction perpendicular to the extrusion direction. According to the above, a thermoelectric ability of a thermoelectric material and an efficiency for manufacturing a thermoelectric module may be improved.

Abstract: Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and less than 0.5.

Abstract: A thermoelectric composite material includes MXene inserted at a boundary of a crystal grain consisting of a thermoelectric material. Accordingly, the thermoelectric composite material may have a reduced thermal conductivity and an increased electrical conductivity. Furthermore, a mechanical property of the thermoelectric composite material may be improved. Thus, the thermoelectric composite material may improve a thermoelectric ability of a thermoelectric module.

Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress.