Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract: An integrated circuit device is manufactured by a method including forming a stacked mask structure including a carbon-containing film and a silicon-containing organic anti-reflective film is on a substrate, forming a silicon-containing organic anti-reflective pattern by etching the silicon-containing organic anti-reflective film, and forming a composite mask pattern including a carbon-containing mask pattern and a profile control liner lining interior surfaces of the carbon-containing mask pattern by etching the carbon-containing film while using the silicon-containing organic anti-reflective pattern as an etch mask. Ions are implanted into the substrate through a plurality of spaces defined by the composite mask pattern.

Abstract: An integrated circuit device is manufactured by a method including forming a stacked mask structure including a carbon-containing film and a silicon-containing organic anti-reflective film is on a substrate, forming a silicon-containing organic anti-reflective pattern by etching the silicon-containing organic anti-reflective film, and forming a composite mask pattern including a carbon-containing mask pattern and a profile control liner lining interior surfaces of the carbon-containing mask pattern by etching the carbon-containing film while using the silicon-containing organic anti-reflective pattern as an etch mask. Ions are implanted into the substrate through a plurality of spaces defined by the composite mask pattern.

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract: A semiconductor device, including a first fin type pattern and a second fin type pattern defined by a trench, the first fin type pattern and the second fin type pattern extending in a first direction, the first fin type pattern and the second fin type pattern being closest to each other; a field insulation layer filling a portion of the trench; and a contact contacting the field insulation layer, the first fin type pattern, and the second fin type pattern, the contact having a bottom surface in a shape of a wave.

Abstract: A method of fabricating a semiconductor device includes forming a gate electrode structure on a substrate, forming a first spacer material layer covering the gate electrode structure, forming a second spacer material layer covering the first spacer material layer, and etching the first and second spacer material layers using an etch-back process to form first and second spacers.

Abstract: A method is provided for fabricating a semiconductor device that includes: forming a gate pattern on a substrate; forming a source/drain in the vicinity of the gate pattern; forming an etch stop film, which covers the gate pattern and the source/drain, on the substrate; forming an interlayer insulating film on the etch stop film; forming a shared contact hole that exposes the gate pattern and the source/drain by etching the interlayer insulating film, wherein a polymer is generated in the shared contact hole a process of etching the interlayer insulating film; removing the polymer by performing etching using hydrogen gas, nitrogen gas or a mixture of hydrogen and nitrogen before etching the etch stop film; and etching the etch stop film.

Abstract: Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. A polymer material is disposed over the masking material. The masking material and the polymer layer are used to pattern the material layer of the workpiece.